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The Kinetics of Low Pressure Rapid Thermal Oxidation of Silicon

Published online by Cambridge University Press:  25 February 2011

Stephan E Lassig  and
John L
John L
Affiliation:
Crowley Peak Systems Inc., Fremont, CA 94538
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Abstract

A study of the oxidation kinetics of lightly doped (100) silicon in dry oxygen has been carried out at different pressures (0.03 atm. to 1.0 atm.) and temperatures (900ºC to 1200ºC) for short times (< 500 seconds). The data can be fit equally well to the parabolic model as it can to the linearparabolic or parallel oxidation models. The activation energy derived from analysis of the parabolic rate constant is 0.94 eVand is the same at 1.0 and 0.1 atmosphere dry O2. It was also found that the parabolic rate constant displayed a linear dependence on the O2 pressure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 307
Copyright
Copyright © Materials Research Society 1989

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References

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