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Infrared Spectroscopy of Intersitial Oxygen in Silicon

Published online by Cambridge University Press:  28 February 2011

Bernard Pajot  and
Bernard Cales
Bernard Pajot
Affiliation:
Groupe de Physique des Solides de l'E.N.S., Université Paris 7, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France
Bernard Cales
Affiliation:
C.N.R.S., Centre de Recherche sur la Physique des Hautes Températures, 45045 Orléans Cedex, France
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Abstract

A discussion of the isotope shift of the low temperature spectrum of the stretching mode of interstitial oxygen (Oi) in silicon introduces IR results showing the interaction of Oi with the silicon lattice. Evidence is given that the temperature dependence of a combination band observed at liquid helium temperature (LHT) at 1205.7 cm−1 is responsible for the room temperature (RT) band at 1227 cm−1 and that a weak band near 1013 cm−1 is an overtone of the 518 cm−1 band.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 39
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Bosomworth, D.R., Hayes, W., Spray, A.R.L. and Watkins, G.D., Proc. Roy. Soc. Lond., A. 317, 133 (1970).Google Scholar
2. Hrostowski, H.J. and Alder, B.J., J. Chem. Phys., 33, 980 (1960).Google Scholar
3. Pajot, B., Doctoral Dissertation, unpublished, Paris, 1969.Google Scholar
4. Lappo, M.T. and Tkachev, V.D., Sov. Phys. Semicond., 4, 418 (1970).Google Scholar
5. Krishnan, A.K. and Hill, S.L., in Fourier Transform Infrared Spectrocopy (1981), p. 27, Sakai, H., Editor, S.P.I.E. 289, S.P.I.E., Bellingham, WA (1981).Google Scholar
6. Pajot, B., Stein, H.J., Cales, B. and Naud, C., J. Electrom. Soc., 132, 3034 (1985).Google Scholar
7. Newman, R.C. and Smith, R.S., J. Phys. Chem. Solids, 30, 1493 (1969).Google Scholar
8. Newman, R.C., Adv. Phys., 18, 545 (1969).Google Scholar
9. Pajot, B. and Bardeleben, J. von, in Proceedings of the 13th Conference on Defects in Semiconductors, edited by Kimerling, L.C. and Parsey, J.M. (Metallurgical Society of AIME, Warrendale, PA, 1985), p. 685.Google Scholar