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Infrared Absorption Studies of Thermal Donors in Silicon

Published online by Cambridge University Press:  28 February 2011

Peter Wagner
Peter Wagner*
Affiliation:
Heliotronic GmbH D-8263 Burghausen, Federal Republic of Germany
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Abstract

Infrared absorption investigations of oxygen containing silicon reveal that the thermal donors generated by annealing around 450 °C consist of a series of shallow double donors with slightly differing ground state energies. The kinetics of formation and decay of these donors in samples with varying oxygen content annealed at temperatures between 460 and 600 °C support the relation of the thermal donors to aggregates of oxygen atoms. A preferential orientation of thermal donors induced by uniaxial stress during their growth demonstrates their low symmetry and extended defect-like nature. Optical cross sections evaluated by comparing IR-absorption spectra with resistivity measurements allow to estimate the concentrations of the different donors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 125
Copyright
Copyright © Materials Research Society 1986

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References

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