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Influence of Chemical Dopant Technique to Reduce Schottky Barriers of Pd-Contacted CNTFETs

Published online by Cambridge University Press:  01 February 2011

Damien Casterman  and
Merlyne Maria De Souza
Damien Casterman
Affiliation:
damian@dmu.ac.uk, EMTERC, Gateway street, Hawthorne Building H00.26, Leicester, LE19BH, United Kingdom
Merlyne Maria De Souza
Affiliation:
mms@dmu.ac.uk, EMTERC, Gateway Street, Hawthorne Building H00.26, Leicester, LE19BH, United Kingdom
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Abstract

The role of the p-type chemical dopant, SbCl6, on Palladium (Pd)-contacted carbon nanotube field effect transistors (CNTFETs) is investigated using ab initio calculations. The interaction of SbCl6 with Pd leads to the chemisorption of one chlorine atom (Cl) which separates off from the rest of the molecule leaving behind a rehybridized SbCl5 molecule. This interaction increases the local workfunction by 0.08 eV. The interaction of the molecule with the carbon nanotube (CNT) itself results in the physisorption of SbCl6 onto CNT. The SbCl6 is found to degenerately dope CNT p-type and shifts the local potential by 0.29 eV. These barriers are useful for modelling of transport of Schottky barrier CNTFETs.

Keywords

nanostructureadsorptiondopant
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 963: Symposium Q – Nanowires and Carbon Nanotubes – Science and Applications , 2006 , 0963-Q10-62
Copyright
Copyright © Materials Research Society 2007

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