Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2024-12-21T16:51:52.795Z Has data issue: false hasContentIssue false
  • English
  • Français

In situ XPS investigation about the growth of the first atomic layer of Ta(N) films deposited by thermal TBTDET ALD

Published online by Cambridge University Press:  01 February 2011

Steffen Strehle ,
Daniela Schmidt ,
Sebastian Gutsch ,
Martin Knaut ,
Matthias Albert  and
Johann W. Bartha
Steffen Strehle
Affiliation:
steffen.strehle@tu-dresden.de, TU Dresden, Institute of Semiconductor and Microsystems Technology, Dresden, Germany
Daniela Schmidt
Affiliation:
daniela.schmidt@tu-dresden.de, TU Dresden, Institute of Semiconductor and Microsystems Technology, Dresden, Germany
Sebastian Gutsch
Affiliation:
s.gutsch@gmx.net, TU Dresden, Institute of Semiconductor and Microsystems Technology, Dresden, Germany
Martin Knaut
Affiliation:
martin.knaut@tu-dresden.de, TU Dresden, Institute of Semiconductor and Microsystems Technology, Dresden, Germany
Matthias Albert
Affiliation:
matthias.albert@tu-dresden.de, TU Dresden, Institute of Semiconductor and Microsystems Technology, Dresden, Germany
Johann W. Bartha
Affiliation:
matthias.albert@tu-dresden.de, TU Dresden, Institute of Semiconductor and Microsystems Technology, Dresden, Germany
Get access

Abstract

Ta based films are important building blocks for modern microelectronic applications. To meet the requirements of miniaturization, atomic layer deposition appears to be an alternative technology in comparison to PVD and CVD. In the present paper investigations of a thermal TBTDET ALD process will be presented with emphasis to the first ALD reaction cycles on native silicon oxide and HF etched silicon surfaces. The investigations show that the substrate chemistry is a crucial parameter for the film growth and appears to be a key to control the ALD deposition. The investigations were done by XPS without any vacuum break between the deposition and the surface analysis.

Keywords

atomic layer depositionx-ray photoelectron spectroscopy (XPS)thin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1146: Symposium NN – In Situ Studies across Spatial and Temporal Scales for Nanoscience and Technology , 2008 , 1146-NN09-08
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Puurunen, R.L., J. Appl. Phys. 97 (2005) 121301 1–52Google Scholar
[2] Schmidt, D., Strehle, S., Albert, M., Hentsch, W., Bartha, J.W., Microelectron. Eng. 85 (2008) 527–533 Google Scholar
[3] Strehle, S., Schumacher, H., Schmidt, D., Knaut, M., Albert, M., Bartha, J.W., Microelectron. Eng. 85 (2008) 2064– 2067Google Scholar
[4] Briggs, D., Seah, M.P.. Practical Surface Analysis - Auger and X-ray Photoelectron Spectroscopy, Vol. 1, John Wiley & Sons 1990 Google Scholar
[5] Cumpson, P. J. and Seah, M. P., Surf. Inter. Anal. 25 (1997) 430–446 Google Scholar
[6] Volpi, F., Cadix, L., Berthomé, G., Blanquet, E., Jourdan, N., Torres, J., Microelectron Eng. 85 (2008) 2068–2070 Google Scholar
[7] Takeda, S., Fukawa, M., Hayashi, Y., Matsumoto, K., Thin Solid Films 339 (1999) 220–224 Google Scholar
[8] Kasi, S.R., Liehr, M., Thity, P.A., Dallaporta, H., Offenberg, M., Appl. Phys. Lett. 59 (1991) 108–110 Google Scholar