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In Situ Reflection High-Energy Electron Diffraction Study of Structure and Morphology Evolution of AlN Thin Films During Growth

Published online by Cambridge University Press:  10 February 2011

F. Jin ,
G. W. Auner ,
R. Naik ,
P. Zatyko  and
U. Rao
F. Jin
Affiliation:
Electrical Engineering Dept., and * Physics Dept., Wayne State Univ., Detroit, MI 48202
G. W. Auner
Affiliation:
Electrical Engineering Dept., and * Physics Dept., Wayne State Univ., Detroit, MI 48202
R. Naik
Affiliation:
Electrical Engineering Dept., and * Physics Dept., Wayne State Univ., Detroit, MI 48202
P. Zatyko
Affiliation:
Electrical Engineering Dept., and * Physics Dept., Wayne State Univ., Detroit, MI 48202
U. Rao
Affiliation:
Electrical Engineering Dept., and * Physics Dept., Wayne State Univ., Detroit, MI 48202
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Abstract

AIN films were grown on Si (111) substrates using a PSMBE deposition system. Two types of growth methods were used: (i) a continuous growth at one temperature and (ii) a two stage growth where a buffer layer at low temperature is followed by deposition at higher temperature. The structure and morphology of the films grown at different temperatures are compared. The evolution of surface structure and morphology of the film during the growth were studied using in-situ RHEED, X-ray diffraction, and AFM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 191
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Roman, and Adriaansen, A.P.M., Thin Solid Films, Aluminum nitride films made by low pressure chemical vapour deposition: preparation and properties 169. 241 (1989).Google Scholar
2. Cox, D. C. Cummins, , Kawabe, K., and Tredgold, T., J. Phys. Chem. Solids, 28, On the preparation, optical properties and electrical behavior of an aluminum nitride, 543 (1992).Google Scholar
3. Strite, S. and Morkoc, H., J.Vac. Sci. Technol. B, GaN, AIN, and InN: A review 10, 1237 (1992).Google Scholar
4. Itoh, M. Kato, and Sugiyama, K., Thin Solid Films, 146, Plasma-enhanced chemical vapor deposition of AIN coating s on graphite substrates, 255 (1987).Google Scholar
5. Kubota, K. et al., J. Appl. Phys. 66, Preparation and properties of III-V nitride thin films 2984 (1989).Google Scholar
6. Windischmann, H., J. appl. Phys. 62, an intrinsic stress scaling law for polycrystalline thin films prepared by ion beam sputtering 1800 (1987).Google Scholar
7. Hentzell, , Haper, J.M.E., and Cuomo, J.J., Mater. Res. Symp. Proc. 27, Structure of Al-N films deposited by a dual ion beam process 519 (1984).Google Scholar
8. Morgan, J.S., Bryden, W.A., Kistenmacher, RT.J., Ecelberger, S.A., and Poehler, T.O., J.Mater.Res. 5, Single-phase aluminum nitride films by dc-magnetron souttering 2677 (1990).Google Scholar
9. Auner, , Lenane, T. D., Ahmad, F., in Wide Band Gap Electronic Materials, 329-334(1995)Google Scholar