Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-17T16:30:23.315Z Has data issue: false hasContentIssue false
  • English
  • Français

Impact of Hydrogen Dilution on the Properties and Light Induced Changes of A-SI:H Based Materials and Solar Cells

Published online by Cambridge University Press:  15 February 2011

Yeeheng Lee ,
Lihong Jiao ,
Joohyun Koh ,
Hiroyuki Fujiwara ,
Zhou Lu ,
R. W. Collins  and
C. R. Wronski
Yeeheng Lee
Affiliation:
Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16801
Lihong Jiao
Affiliation:
Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16801
Joohyun Koh
Affiliation:
Department of Physics, The Pennsylvania State University, University Park, PA 16801
Hiroyuki Fujiwara
Affiliation:
Department of Physics, The Pennsylvania State University, University Park, PA 16801
Zhou Lu
Affiliation:
Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16801
R. W. Collins
Affiliation:
Department of Physics, The Pennsylvania State University, University Park, PA 16801
C. R. Wronski
Affiliation:
Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16801
Get access

Abstract

Studies have been carried out on a-Si:H materials and corresponding solar cells fabricated with and without hydrogen dilution of silane by rf PECVD. The effect of hydrogen dilution on the growth kinetics and microstructures and their dependence on the substrate temperature have been studied. Hydrogen diluted a-Si:H materials and solar cells exhibit improved properties and higher stability to light induced changes. Distinct differences are found in the electron mobility lifetime (μτ) products and subgap absorption over a wide range of generation rates. Striking differences are also found in the kinetics of light induced degradation in both the materials and their corresponding solar cells. Direct correlations are presented between the degradation kinetics of p(a-SiC:H)/i(a-Si:H)/n(μc-Si) solar cells and those of thin film materials constituting the i-layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 747
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Spear, W. and LeComber, P., Solid State Comm. 17, 1193 (1975).Google Scholar
2. Carlson, D.E. and Wronski, C.R.. Appl, Phys. Lett. 28, 671 (1976).Google Scholar
3. Acco, S., Williamson, D.L., Stolk, P.A., Saris, F. W., van den Boogaard, M.J., Sinke, W.C., van der Weg, W.F., Roorda, S., and Zalm, P.C., Phy. Rev. B 53, 4415 (1996).Google Scholar
4. Xu, X., Yang, J., and Guha, S., Mat. Res. Soc. Symp. Proc., 297, 649 (1993).Google Scholar
5. Jackson, W.B., Phys. Rev. B 41, 1059 (1990).Google Scholar
6. Bennett, M., Rajan, K., and Kritikson, K., Conf. Record of 23rd IEEE PVSC, 845 (IEEE, 1993).Google Scholar
7. Yang, J., Xu, X., and Guha, S., Mat. Res. Soc. Symp. Proc. 336, 687 (1994).Google Scholar
8. Tanakaand, K. Matsuda, A., Mater. Sci. Rep. 2, 139 (1987).Google Scholar
9. Hishikawa, Y., Tsuda, S., Wakisaka, K., and Kuwano, Y., J. Appl. Phys. 73, 4227 (1993).Google Scholar
10. Okamoto, S., Hishikawa, Y., and Tsuda, S., Jpn. J. Appl. Phys. 35, 26 (1996).Google Scholar
11. Collins, R.W., Koh, J., Lu, Y.. Kim, S., Bumham, J.S., and Wronski, C.R., Conf. Record of 25th IEEE PVSC, 1035 (IEEE. 1996).Google Scholar
12. Lee, Y., Jiao, L., Liu, H., Lu, Z., Collins, R.W., and Wronski, C.R., Conf. Record of 25th IEEE PVSC, 1165 (IEEE. 1996).Google Scholar
13. Collins, R.W., Fujiwara, H., Koh, J., Lee, Y. and Wronski, C.R., (submitted to ICAS to be held in Budapest. Hungary).Google Scholar
14. Yang, L. and Chen, L.-F., Mat. Res. Soc. Symp. Proc., 336, 669 (1994).Google Scholar
15. Canillas, A., Campmany, J., Anduújar, J.L. and Bertran, E., Thin Solid Films 228. 109 (1993).Google Scholar
16. Jiao, L., Semoushikina, S., Lee, Y., and Wronski, C.R. (presented in this conference).Google Scholar
17. Kroll, U., Meier, J., and Shall, A., J. Appl. Phys. 80, 4971 (1996).Google Scholar
18. Xu, X., Yang, J., and Guha, S., J. Non-Cryst. Solids 198/200, 60 (1996).Google Scholar
19. Gunes, M., Wronski, C.R., and McMahon, T.J., J. Appl. Phys. 76, 2260 (1994).Google Scholar
20. Xu, X., Yang, J., and Guha, S., Mat. Res. Soc. Symp. Proc. 297. 649 (1993).Google Scholar
21. Williamson, D.L., Mat. Res. Soc. Symp. Proc. 377, 251 (1995).Google Scholar
22. Maley, N., Phys. Rev. B 46, 2078 (1992).Google Scholar
23. Jiao, L., Chen, I.-S., Lee, Y., Collins, R.W., and Wronski, C.R. (submitted to Appl. Phys. Lett).Google Scholar
24. Lee, Y., Niu, X., Lu, Z., Jian, L., Schiff, E.A., and Wronski, C.R. (to be published).Google Scholar