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Hydrogenation of GaAs and Application to Device processing

Published online by Cambridge University Press:  21 February 2011

N. Pan ,
M. S. Feng ,
G. S. Jackson ,
S. S. Bose ,
L. J. Guido ,
N. Holonyak Jr.  and
G. E. Stillman
N. Pan
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
M. S. Feng
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
G. S. Jackson
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
S. S. Bose
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
L. J. Guido
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
N. Holonyak Jr.
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
G. E. Stillman
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
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Abstract

Exposure of GaAs and AlGaAs to a hydrogen plasma has been shown to result in a significant change in the electrical and optical properties. The changes are related to the electrical deactivation of the deep and shallow impurities by hydrogenation. Spectroscopic and electrical measurements have shown that Si donors and C acceptors in high purity GaAs can be passivated by hydrogenation. Hydrogenation of p-type GaAs and AlGaAs has resulted in highly resistive material. SiO2 was found to be a suitable mask for the hydrogenation process. Single and multiple stripe geometry lasers have been fabricated by properly masking the laser structure. The lasers produced using the hydrogenation process have low threshold currents and are capable of cw room temperature operation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 257
Copyright
Copyright © Materials Research Society 1988

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References

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