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Hydrogen Passivation of Grain Boundaries in Polycrystalline Silicon Deposited by Molecular Beams

Published online by Cambridge University Press:  22 February 2011

D. Jousse ,
S. L. Delage ,
S. S. Iyer  and
M. Crowder
D. Jousse
Affiliation:
IBM T.J. Watson Research Center, P.O.Box 218, Yorktown Heights, NY 10598
S. L. Delage
Affiliation:
IBM T.J. Watson Research Center, P.O.Box 218, Yorktown Heights, NY 10598
S. S. Iyer
Affiliation:
IBM T.J. Watson Research Center, P.O.Box 218, Yorktown Heights, NY 10598
M. Crowder
Affiliation:
IBM San Jose, 5600 Cottle Road, San Jose, CA 95193
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Abstract

Grain boundary properties of polysilicon deposited by molecular beams have been investigated by electron spin resonance and conductivity measurements. The variations of the conductivity activation energy with doping can be explained by a density of states model consisting mainly of two exponential bandtails, implying that dangling bonds play a minor role. A hydrogen plasma treatment at 500 °C reduces the spin density by a factor of three but also passivates weak Si-Si bonds thus leading to steeper bandtails. The possibility of hydrogen-related intra-grain gap states is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 359
Copyright
Copyright © Materials Research Society 1988

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References

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