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High Resolution X-ray Diffraction Analysis of GaN-Based Heterostructures Grown by OMVPE

Published online by Cambridge University Press:  10 February 2011

M.S. Goorsky ,
A.Y. Polyakov ,
M. Skowronski ,
M. Shin  and
D.W. Greve
M.S. Goorsky
Affiliation:
UCLA, Department of Materials Science and Engineering, Los Angeles, CA 90095–1595
A.Y. Polyakov
Affiliation:
Carnegie Mellon University, Department of Materials Science and Engineering, Pittsburgh, PA 15213–3890
M. Skowronski
Affiliation:
Carnegie Mellon University, Department of Materials Science and Engineering, Pittsburgh, PA 15213–3890
M. Shin
Affiliation:
Carnegie Mellon University, Department of Electrical and Computer Engineering, Pittsburgh, PA 15213–3890
D.W. Greve
Affiliation:
Carnegie Mellon University, Department of Electrical and Computer Engineering, Pittsburgh, PA 15213–3890
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Abstract

We demonstrate the use of triple axis diffraction measurements, including Φ scans (in which the sample is rotated about an axis perpendicular to its surface) to assess the crystal perfection of wurtzite GaN layers on sapphire grown using different pre-nitridation growth treatments by or-ganometallic vapor phase epitaxy. The Φ scans determine the in-plane misorientation angles between the crystallites and hence provide information on the edge dislocation density. Using glancing incidence (1014) and (1015) reflections, we determined that the misorientation among the GaN crystallites decreases with increasing layer thickness and that the pre-nitridation conditions control the initial level of misorientation. Triple axis ω and ω-2θ scans around the (0002) reflection did not show a systematic trend with increasing layer thickness. However, layers grown without a pre-nitridation step tended to exhibit higher values of both mosaic spread and strain. The appropriate asymmetric reflections for GaN-based Φ scan measurements are determined using structure factor calculations, which are presented here.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 489
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1]. Nakamura, S., Jpn. J. Appl. Phys. 30 L1705 (1991)Google Scholar
[2]. Hiramatsu, K., Itoh, S., Amano, H., Akasaki, I., Kuwano, N., Shiraishi, T., and Oki, K., J. Cryst. Growth 115 628 (1991).Google Scholar
[3] Wu, X.H., Kapolnek, D., Tarsa, E.J., Heying, B., Keller, S., Keller, B.P., Mishra, U.K., DenBaars, S.P., and Speck, J.S., Appl. Phys. Lett. 68 1371 (1996).Google Scholar
[4]. Keller, S., Keller, B.P., Wu, Y.-F., Heying, B., Kapolnek, D., Speck, J.S., Mishra, U.K., and DenBaars, S.P., Appl. Phys. Lett. 68 1525 (1996).Google Scholar
[5] Qian, W., Skowronski, M., De Graef, M., Doverspike, K., Rowland, L.B., and Gaskill, D.K., Appl. Phys. Lett. 66 1252 (1995).Google Scholar
[6] Fertitta, K.G., Holmes, A.L., Neff, J.G., Ciuba, F.J., and Dupuis, R.D., Appl. Phys. Lett. 65 1823 (1994)Google Scholar
[7] Kung, P., Saxler, A., Zhang, X., Walker, D., Wang, T.C., Ferguson, I., and Razeghi, M., Appl. Phys. Lett. 66 2958 (1995))Google Scholar
[8] Heying, B., Wu, X.H., Keller, S., Li, Y.., Kapolnek, D., Keller, B.P., DenBaars, S.P., and Speck, J.S., Appl. Phys. Lett. 68 643 (1996).Google Scholar
[9] International Tables for X-Ray Crystallography, MacGillavry, C.H., Rieck, G.D., and Lonsdale, K., eds. Kynoch Press, Bimingham, England 1962 Vol.IIIGoogle Scholar
[10] Hersee, S.D., Ramer, J., Zheng, K., Kranenberg, C., Malloy, K., Banas, M., and Goorsky, M., J. Electron. Mater. 24 1519 (1995).Google Scholar
[11] Polyakov, A., unpublished.Google Scholar