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High Quality Deposition of SiO2 Downstream from a Microwave Discharge

Published online by Cambridge University Press:  25 February 2011

B. Robinson ,
P. D. Hoh ,
P. Madakson ,
T. N. Nguyen  and
S. A. Shivashankar
B. Robinson
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598.
P. D. Hoh
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598.
P. Madakson
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598.
T. N. Nguyen
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598.
S. A. Shivashankar
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598.
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Abstract

High quality stoichiometric silicon dioxide films have been deposited on silicon substrates at low pressure(1.0Torr) and low temperatures(≤ 350C) downstream and at a right angle to a microwave discharge. The deposition was accomplished by injecting 2% SiH4 in helium downstream of a N20 microwave generated discharge. Infrared spectroscopic analysis has determined that no detectable SiH, SiOH, Si-H2o or SiN chemical complexes were present in any films deposited at temperatures above 250C. Rutherford Backscattering and Forward Scattering Detection Spectroscopy were used to determine the elemental composition and hydrogen concentration in the films, respectively. The thick films were found to be stoichiometric with no detectable elemental impurities. The measured hydrogen concentration in the thin films was comparable to that measured in thermally grown Si0 2 of approximately the same thickness. The quality of the thin oxides(<30nm) has been determined by fabricating MOS devices from the Si-Si0 2 system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 98: Symposium K – Plasma Processing and Synthesis of Materials II , 1987 , 313
Copyright
Copyright © Materials Research Society 1987

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References

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