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Growth of Triglycine Sulfate (Tgs) Crystals by Solution Technique*

Published online by Cambridge University Press:  15 February 2011

R. B. Lal ,
R. L. Kroes  and
W. R. Wilcox
R. B. Lal
Affiliation:
Alabama A & M University, Huntsville, Alabama
R. L. Kroes
Affiliation:
NASA/MSFC
W. R. Wilcox
Affiliation:
Alabama A & M University, Huntsville, Alabama
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Abstract

The growth of crystals from solution is greatly influenced by buoyancy driven convection. In a low-g environment, convection is greatly suppressed and diffusion becomes the predominant mechanism for thermal and mass transport. An experiment to grow TGS crystals by solution technique during the orbital Spacelab III mission has been designed. Crystals are grown by a new and unique technique of extracting heat from the crystal through a sting. The cooling at the sting tip is responsible for the desired supersaturation near the growing crystal. Calculations indicate that the cooled sting technique for solution crystal growth is necessary in low-g to maintain a maximum growth rate of 1 mm/day. Results of groundbased work in support of the flight experiment are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 9 , 1981 , 399
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1.Lal, R. B. and Kroes, R. L., J. Electrochem. Soc., 127, No. 3, 137 C (1980).Google Scholar
2.Kroes, R. L. and Reiss, D., NASA Technical Memorandum, TM-82394, Jan. (1981).Google Scholar
3.Putley, E. H., Semiconductors and Semi-metals, eds. Willardson, R. K. and Albert, C. B., 5 (Academic Press, New York 1970).Google Scholar
4.Beerman, H. P., Ferroelectrics, 2, 123 (1971).Google Scholar
5.Master, J. and Janta, J., Czech. J. Phys., B 20, 230 (1970).Google Scholar
6.Torgensen, J. L., Horton, A. T. and Saylor, C. P., J. Res. Nat. Bur. Stand (USA) 67 C, 25 (1963).Google Scholar
7.Swets, D. E. and Jorgensen, E. S., J. Crystal Growth, 5, 299 (1969).Google Scholar
8. Critical Design Review (CDR), NASA/MSFC, December (1980).Google Scholar
9.Liu, L. C., Wilcox, W. R., Kroes, R. L. and Lal, R. B., Another paper, same session.Google Scholar
10.Nitsche, R., Helv. Phys. Acta, 31, 306 (1958).Google Scholar
11.Brezina, B., Mater. Res. Bull., 6, 401 (1971).Google Scholar
12.Davey, R. J. and White, E. A. D., J. Crystal Growth, 30, 125 (1975).Google Scholar
13.Wilcox, W. R., J. Crystal Growth, 37, 229 (1977).Google Scholar
14.Izrael, A., Petroff, J. F., Authier, A. and Malek, Z., J. Crystal Growth, 16, 131 (1972).Google Scholar