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The Growth of Homo-Epitaxial Silicon at Low Temperatures Using Hot Wire Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

J. Thiesen ,
K.M. Jones ,
R. Matson ,
R. Reedy ,
E. Iwaniczko ,
H. Mahan  and
R. Crandall
J. Thiesen
Affiliation:
Also of the Dept. of Electrical Eng., University of Colorado, Boulder, CO
K.M. Jones
Affiliation:
National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, CO, 80401
R. Matson
Affiliation:
National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, CO, 80401
R. Reedy
Affiliation:
National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, CO, 80401
E. Iwaniczko
Affiliation:
National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, CO, 80401
H. Mahan
Affiliation:
National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, CO, 80401
R. Crandall
Affiliation:
National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, CO, 80401
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Abstract

We report on the first known growth of high-quality epitaxial Si via the hot wire chemical vapor deposition (HWCVD) method. This method yields epitaxial Si at the comparatively low temperatures of 195° to 450°C, and relatively high growth rates of 3 to 20 Å/sec. Layers up to 4500-Å thick have been grown. These epitaxial layers have been characterized by transmission electron microscopy (TEM), indicating large regions of nearly perfect atomic registration. Electron channeling patterns (ECPs) generated on a scanning electron microscope (SEM) have been used to characterize, as well as optimize the growth process. Electron beam induced current (EBIC) characterization has also been performed, indicating defect densities as low as 8×104/cm2. Secondary ion beam mass spectrometry (SIMS) data shows that these layers have reasonable impurity levels within the constraints of our current deposition system. Both n and p-type layers were grown, and p/n diodes have been fabricated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 570: Symposium V – Epitaxial Growth , 1999 , 261
Copyright
Copyright © Materials Research Society 1999

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References

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