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Growth of Ferroelectric PbZrxTi1-xO3 (PZT) Thin Films by Liquid-Delivery Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  26 February 2011

Serhiy Matichyn ,
Marco Lisker  and
Edmund P. Burte
Serhiy Matichyn
Affiliation:
Serhiy.Matichyn@e-technik.uni-magdeburg.de, Otto-von-Guericke University, Institute of Micro and Sensor Systems, Universitätsplatz 2, Magdeburg, N/A, N/A, Germany
Marco Lisker
Affiliation:
marco.lisker@et.uni-magdeburg.de
Edmund P. Burte
Affiliation:
edmund.burte@et.uni-magdeburg.de
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Abstract

In this study lead zirkonat titanate (PZT) thin films were deposited using direct liquid injection metal organic chemical vapor deposition (DLI-MOCVD).

The chemical states and the stoichiometry of PZT-films were characterized using X-ray photoelectron spectroscopy (XPS). The crystal structure of the films was investigated by X-ray diffraction (XRD).

The surface composition of the films was Pb : Zr : Ti = 1.05 : 0.52 : 0.48, which indicates that the deposited films had a stoichiometric PZT composition. 130 nm thick PZT films deposited on Ir showed <110> preferred orientation.

The main role for formation of the perovsktive PZT films plays the content of the lead in the deposited films. Lead deficiency causes the formation of the pyrochlore phase with poor electrical properties. In films with a significant excess of lead a second PbO phase appeared that can be observed even with naked eyes. Negligible excess of lead can be reduced by post-deposition annealing at 500-600 °C.

The Ir/PZT/Ir capacitor showed large values of the remanent polarisation of about 60μC/cm2 at an applied voltage of 3 V. So high value of the remanent polarisation can be induced by structural stress in the films. After ten switch impulses the values of the remanent polarisation have significantly decreased. This is probably due to a relaxation of crystal cells.

Keywords

chemical vapor deposition (CVD) (deposition)ferroelectricIr
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T03-34
Copyright
Copyright © Materials Research Society 2006

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