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Growth and Doping Kinetics of GexSil-x Structures by Limited Reaction Processing

Published online by Cambridge University Press:  25 February 2011

P.M. Garone ,
J.C. Sturm ,
P.V. Schwartz ,
S.A. Schwarz  and
B. Wilkens
P.M. Garone
Affiliation:
Dept. of Electrical Eng. Princeton, NJ 08544
J.C. Sturm
Affiliation:
Dept. of Electrical Eng. Princeton, NJ 08544
P.V. Schwartz
Affiliation:
Dept. of Electrical Eng. Princeton, NJ 08544
S.A. Schwarz
Affiliation:
Bell Comunications Research Red Bank, NJ
B. Wilkens
Affiliation:
Bell Comunications Research Red Bank, NJ
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Abstract

We have investigated the growth rate and boron doping of Sil-xGex epitaxial films grown by Limited Reaction Processing The growth experiments were carried out at a pressure of 6.0 torr with growth temperatures ranging from 625°C to 1000°C. The growth rate increases rapidly upon the additon of a small germane flow to the dichlorosilane in the reaction-rate-limited growth regime, and can not be explained simply by germanium incorporation. The presence of germane can increase the silicon growth rate by up to a factor of one hundred. Boron doping was also studied at high concentrations of boron in Si and Sil-xGex epitaxial films as a function of diborane flow and growth rate supports a simple kinetic model rather than an equilibrium model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 41
Copyright
Copyright © Materials Research Society 1989

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References

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