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Growth and Characterization of Epitaxial Al1−xInxN Films Grown on Sapphire (0001) by Plasma Source Molecular Beam Epitaxy

Published online by Cambridge University Press:  17 March 2011

M. J. Lukitsch ,
G. W. Auner ,
R. Naik  and
V. M. Naik
M. J. Lukitsch
Affiliation:
Dept. of Electrical and Computer Engineering, Wayne State University, Detroit, MI
G. W. Auner
Affiliation:
Dept. of Electrical and Computer Engineering, Wayne State University, Detroit, MI
R. Naik
Affiliation:
Dept. of Physics, Wayne State University, Detroit, MI
V. M. Naik
Affiliation:
Department of Natural Sciences, University of Michigan-Dearborn, Dearborn, MI
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Abstract

Epitaxial Al1−xInxN films (thickness ∼150 nm) with 0 ≤ × ≤ 1 have been grown by Plasma Source Molecular Beam Epitaxy on Sapphire (0001) at a low substrate temperature of 375°C and were characterized by reflection high energy electron diffraction (RHEED), x-ray diffraction (XRD), and atomic force microscopy (AFM). Both RHEED and XRD measurements confirm the c-plane growth of Al1-xInxN films on sapphire (0001) with the following epitaxial relations: Nitride [0001] ∥ Sapphire [0001] and Nitride < 0110 > ∥ Sapphire <2110>. The films do not show any alloy segregation. However, the degree of crystalline mosaicity and the compositional fluctuation increases with increasing In concentration. Further, AFM measurements show an increased surface roughness with increasing In concentration in the alloy films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G6.54
Copyright
Copyright © Materials Research Society 2001

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References

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