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Gate Stack Reliability of High-Mobility 4H SiC Lateral MOSFETs with Deposited Al2O3 Gate Dielectric

Published online by Cambridge University Press:  31 January 2011

Daniel J Lichtenwalner ,
Veena Misra ,
Sarit Dhar ,
Sei-Hyung Ryu  and
Anant Agarwal
Daniel J Lichtenwalner
Affiliation:
djlichte@ncsu.edu, North Carolina State University, Materials Science and Engineering, Raleigh, North Carolina, United States
Veena Misra
Affiliation:
vmisra@ncsu.edu, North Carolina State University, Electrical and Computer Engineering, Raleigh, North Carolina, United States
Sarit Dhar
Affiliation:
Sarit_Dhar@cree.com, CREE, Inc., Power Research and Development, Research Triangle Park, North Carolina, United States
Sei-Hyung Ryu
Affiliation:
sei-hyung_ryu@cree.com, CREE, Inc., Power Research and Development, Research Triangle Park, North Carolina, United States
Anant Agarwal
Affiliation:
Anant_Agarwal@cree.com, CREE, Inc., Power Research and Development, Research Triangle Park, North Carolina, United States
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Abstract

Lateral nMOSFETs have been fabricated on 4H-SiC utilizing deposited dielectrics and gate-last processing. A bi-layer dielectric was utilized consisting of thin nitrided SiO2 covered by 25nm of Al2O3 deposited using atomic layer deposition. Field-effect mobility and threshold voltage (VT) were found to vary with SiC nitric oxide (NO) anneal temperature. High peak mobility values of 106 cm2/V·s were obtained, with a corresponding VT of 0.8 V, using an 1175 °C 20 min NO anneal of the SiC before Al2O3 deposition. Constant voltage stressing (CVS) of the gate (3 MV/cm) for 1000s induces a VT increase of only 0.12 V for the devices stressed at RT, whereas a VT shift of 0.34 V occurs for devices stressed at 150 °C. Heating unstressed devices to 200 °C reveals a stable VT with temperature. Negative charge in the gate region allows for the attainment of positive VT, while VT stability does not suffer.

Keywords

atomic layer depositiondeviceselectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1195: Symposium B – Rellliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials , 2009 , 1195-B04-03
Copyright
Copyright © Materials Research Society 2010

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