Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-19T09:26:39.774Z Has data issue: false hasContentIssue false

Ferroelectricity of Lanthanum-Modified Lead-Titanate Thin Films Deposited on Nickel Alloy Electrodes

Published online by Cambridge University Press:  25 February 2011

Toshio Ogawa
Affiliation:
Murata Manufacturing Co. Ltd., Nagaokakyo, Kyoto 617, Japan
Satoshi Shindou
Affiliation:
Murata Manufacturing Co. Ltd., Nagaokakyo, Kyoto 617, Japan
Atsuo Senda
Affiliation:
Murata Manufacturing Co. Ltd., Nagaokakyo, Kyoto 617, Japan
Tohru Kasanami
Affiliation:
Murata Manufacturing Co. Ltd., Nagaokakyo, Kyoto 617, Japan
Get access

Abstract

Lanthanum-modified lead-titanate (Pbo.85Lao.1Ti03) thin films were fabricated by rf magnetron sputtering on various kinds of substrates such as single-crystal MgO (100), r-plane sapphire and SI (100) with an MgO thin film layer. All the films were able to be evaluated using nickel alloy electrodes which possess low reactivity with PbO, excellent heat-resistance and oxidation-resistance. The quality of these films was affected by the kind of substrate and crystal orientation of nickel alloy electrode used. Furthermore, by controlling the crystal orientation of the alloy electrode, films on Si (100) with an MgO (100) layer showed good ferroelectricity.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Matsui, Y., Nakano, H., Okuyama, M., Nakagawa, T. and Hamakawa, Y. In Proc. 2nd Meeting on Ferroelectric Materials and Their Applications, (FMA Office, Kyoto, 1979), p.239.Google Scholar
2. lijima, K., Kawashima, S. and Ueda, I. In Proc. 6th Int. Meeting on Ferroelectricity, (Kobe, 1985), Jpn. J. Appl. Phys. 24 (1985) Suppl. 24-2, p.482.Google Scholar
3. Fukami, T., Sakuma, T., Tokunaga, K. and Tsuchlya, H. in Proc. 4th Meeting on Ferroelectric Materials and Their Applications, (Kyoto, 1983), Jpn. J. Appl. Phys. 22 (1983) Suppl. 22-2, p.18.Google Scholar
4. Wasa, K., Yamazakl, O., Adachi, H., Kawaguchi, T. and Setsune, K., IEEE J. Lightwave Tech. LT-2, 710 (1984).Google Scholar
5. Scott, J. F., J. Appl. Phys. 64, 1484 (1988).Google Scholar
6. Takayama, R., Tomita, Y., Iijima, K. and Ueda, I., J. Appl. Phys. 63, 5868 (1988).Google Scholar
7. Ogawa, T., Senda, A. and Kasanami, T., in Extended Abstracts of the 37th Spring Meeting of the Japan Society of Applied Physics and Related Societies, (Saitama, 1990) 30-pZ-8 (in Japanese).Google Scholar
8. Ogawa, T., To be published In Integrated Ferroelectrics (Feb. 1992).Google Scholar
9. Ogawa, T., Senda, A. and Kasanami, T., in Proc. 7th Meeting on Ferroelectric Materials and Their Applications, (Kyoto, 1989), Jpn. J. Appl. Phys. 28 (1989) Suppl. 28-2, p.11.Google Scholar
10. Ogawa, T., Senda, A. and Kasanami, T., Jpn. Appl. Phys. 30, 2145 (1991).Google Scholar
11. Herchenroeder, R. B., U. S. Patent 4312682 (Jan. 26, 1982).Google Scholar
12.A catalog of Mitsubishi Materials Corporation, Cat. No. 301 (1990)(in Japanese).Google Scholar
13. Ogawa, T., Kidoh, H., Yashima, H., Morimoto, A. and Shimizu, T., presented at the 1991 MRS Fall Meeting, Boston, Mass.. 1991, 18.5.Google Scholar