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Factors Influencing the Electrical and Optical Properties of Aigan Layers on Sapphire
Published online by Cambridge University Press: 15 February 2011
Abstract
Epitaxial layers of A1xGa1-xN were grown by MOCVD on sapphire substrates and characterized by temperature dependent Hall effect, optical absorption, SIMS and photoluminescence. The concentration of native donors was found to decrease with increase of growth temperature. Deep levels found in A1GaN layers were interpreted as A1 double donor state and T2 donor state of nitrogen vacancy.
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- Copyright © Materials Research Society 1996
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