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Fabrication and characterization of GaN nanopillar arrays

Published online by Cambridge University Press:  01 February 2011

Y.D. Wang ,
S. Tripathy ,
S.J. Chua  and
C.G. Fonstad
Y.D. Wang
Affiliation:
Singapore-MIT Alliance, E4–04–10, 4 Engineering Drive 3, Singapore 117576
S. Tripathy
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
S.J. Chua
Affiliation:
Singapore-MIT Alliance, E4–04–10, 4 Engineering Drive 3, Singapore 117576 Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
C.G. Fonstad
Affiliation:
Singapore-MIT Alliance, E4–04–10, 4 Engineering Drive 3, Singapore 117576 Department of Electrical and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts, USA 02139
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Abstract

Various nanofabrication technologies are currently under investigation to realize fine patterning of III-Nitrides. Dry and wet etching techniques have been explored in the past for the fabrication of GaN-based devices. However, due to etch-induced damage, it is still a major challenge to achieve high-quality GaN-based nanostructures with high aspect ratio. In this study, GaN nanopillars were fabricated by inductively coupled plasma etching (ICP) using anodic aluminium oxide (AAO) as a mask. High-spatial resolution optical techniques were employed to characterize these pillar arrays. The average diameter and length of these pillars are about 60–70 nm and 350–400 nm, respectively. Low temperature micro-photoluminescence spectra show a red shift compared with the spectrum recorded from the as-grown GaN, indicating stress relaxation in these nanopillars. The evidence of good crystalline quality is also confirmed by micro-Raman measurement where red shift of the E2(TO) mode from GaN nanopillars suggest partial relaxation of the compressive strain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E3.5
Copyright
Copyright © Materials Research Society 2005

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