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Epitaxial Growth of CoSi2/Si Hetero-Structure by Solid State Interaction of Co/Ti/Si Multilayer

Published online by Cambridge University Press:  25 February 2011

Bing-zong Li ,
Wei-Jun Wu ,
Kai Shao ,
Zhi-Guang Gu ,
Guo-Bao Jiang ,
Wei-Ning Huang ,
Hua Fang ,
Zhen Sun ,
Ping Liu  and
Zu-Yao Zhou
Bing-zong Li
Affiliation:
Dept. of Electronic Engineering, Fudan University, Shanghai 200433, China
Wei-Jun Wu
Affiliation:
Dept. of Electronic Engineering, Fudan University, Shanghai 200433, China
Kai Shao
Affiliation:
Dept. of Electronic Engineering, Fudan University, Shanghai 200433, China
Zhi-Guang Gu
Affiliation:
Dept. of Electronic Engineering, Fudan University, Shanghai 200433, China
Guo-Bao Jiang
Affiliation:
Dept. of Electronic Engineering, Fudan University, Shanghai 200433, China
Wei-Ning Huang
Affiliation:
Dept. of Electronic Engineering, Fudan University, Shanghai 200433, China
Hua Fang
Affiliation:
Dept. of Electronic Engineering, Fudan University, Shanghai 200433, China
Zhen Sun
Affiliation:
Dept. of Electronic Engineering, Fudan University, Shanghai 200433, China
Ping Liu
Affiliation:
Dept. of Electronic Engineering, Fudan University, Shanghai 200433, China Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Science, Shanghai 200050, China
Zu-Yao Zhou
Affiliation:
Dept. of Electronic Engineering, Fudan University, Shanghai 200433, China Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Science, Shanghai 200050, China
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Abstract

A new method of epitaxial growth of CoSi2 film on Si substrate by ternary solid state interaction is investigated. XRD, RBS and TEM show that single-crystalline CoSi2 can be formed on both Si (111) and (100) substrates by using Co/Ti/Si or TiN/Co/Ti/Si multilayer. The evolution of multilayer structure and its resistivity is studied and epitaxy mechanism is discussed. Experimental results indicate strong affinity between Co and Si. During the ternary interaction the epitaxial CoSi2 can be grown directly on Si and its growth may behave as a diffusion controlled process. The thickness of Ti layer and the annealing procedure have important effect on CoSi2 epitaxial growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 449
Copyright
Copyright © Materials Research Society 1995

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References

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