Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-18T10:43:55.873Z Has data issue: false hasContentIssue false
  • English
  • Français

Empirical Modeling of Electromigration Early Resistance Changes

Published online by Cambridge University Press:  21 February 2011

J. Niehof ,
H.C. de Graaff  and
J.F. Verwey
J. Niehof
Affiliation:
MESA Research Institute, University of Twente, Dept. of Electrical Engineering, group ICE, P.O. Box 217, 7500 AE Enschede, The Netherlands
H.C. de Graaff
Affiliation:
MESA Research Institute, University of Twente, Dept. of Electrical Engineering, group ICE, P.O. Box 217, 7500 AE Enschede, The Netherlands
J.F. Verwey
Affiliation:
MESA Research Institute, University of Twente, Dept. of Electrical Engineering, group ICE, P.O. Box 217, 7500 AE Enschede, The Netherlands
Get access

Abstract

An empirical model for electromigration-induced early resistance changes is given. The basis olthe model are two coupled partial differential equations, one for vacancies, and one for mobile atoms. These equations are then solved numerically. For model verification purposes model calculations are compared with experimentally obtained resistance change curves.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 295
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Marcoux, P.J., Merchant, P.P., Naroditski, V., Rehder, W.D., Hewlett-Packard Journal June 1989.Google Scholar
[2] Kirchheim, R., Kaeber, U., J. Appl. Phys., 70 p 172,1991.Google Scholar
[3] Castañlo, E., Maiz, J., Flinn, P., Madden, M., Appl. Phys. Lett, 59 (1) p129–131, 1991.Google Scholar
[4] Besser, P.R., Madden, M.C., Flinn, P.A., Private Communication.Google Scholar
[5] Madden, M., Marieb, T., Abratowski, E., Flinn, P.A. in Materials Reliability in Microelectronics II, edited by Thompson, C.V., Lloyd, J.R. (Mat. Res. Soc. Proc. 265, Pittsburgh, PA, 1992) pp. 33–38.Google Scholar
[6] Lloyd, J.R., Koch, R.H., Proc. IRPS, p161, 1987.Google Scholar
[7] Hinode, K., Furusawa, T., Homma, Y., Proc. IRPS, p205, 1992.Google Scholar
[8] Niehof, J., Flinn, P.A., Maloney, T.J., Proc. ESREF 92, p359–362,1992.Google Scholar
[9] Möckl, U., Diplom Arbeit Univ. Stuttgart / Max Planck Institute für Metallforschung, 1992.Google Scholar
[10] Liew, B.K., Cheung, N.W., Hu, C., Proc. IRPS, 1989, p215.Google Scholar
[11] Liew, B.K., Ph.D. Dissertation, University of California at Berkely, 1990 Google Scholar
[12] Wolbert, Ph.B.M., Ph.D. Thesis, University of Twente, The Netherlands, 1991.Google Scholar
[13] Nandedkar, A.S., Mat. Res. Soc. Symp. Proc., Fall Meeting Symp 0, 1992.Google Scholar