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Electronic Structures of β-SiC(001) Surfaces and Al/β-SiC(001) Interface

Published online by Cambridge University Press:  21 February 2011

Xiao Hu ,
Hong Yan  and
Fumio S. Ohuchi
Xiao Hu
Affiliation:
Department of Materials Science and Engineering, FB-10 University of Washington, Seattle, WA 98195, U.S.A.
Hong Yan
Affiliation:
Department of Materials Science and Engineering, FB-10 University of Washington, Seattle, WA 98195, U.S.A.
Fumio S. Ohuchi
Affiliation:
Department of Materials Science and Engineering, FB-10 University of Washington, Seattle, WA 98195, U.S.A.
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Abstract

Surface electronic structures of β-SiC reconstructed (001) surfaces and the Al/β-SiC(001) interface have been investigated by employing a tight-binding method. Distinct surface electronic characteristics corresponding to different surface reconstructions are discussed based on the interpretation of surface density of states. The calculations of the Al/β-SiC (001) interface indicate that aluminum deposition on β-SiC(001) surface may induce the substrate to return to the ideal unreconstructed surface and that Al-C interaction is stronger than Al-Si interaction. Al deposition on C-rich surfaces may form a better bonded interface than that on the Si-rich surfaces. Our findings are in good agreement with available experimental and theoretical results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 15
Copyright
Copyright © Materials Research Society 1994

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References

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