Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-18T05:46:28.721Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrochemical Fabrication of Zn1−xMgxO Films from an Aqueous Solution Containing Magnesium Nitrate and Zinc Sulfate

Published online by Cambridge University Press:  01 February 2011

Hiroki Ishizaki  and
Hideaki Maeda
Hiroki Ishizaki
Affiliation:
ishizaki-hiroki@aist.go.jp, Nationala Insitute of Advanced Industrial Science and Technology, Micro-&Nano-Space Chemistry Group Nanotechnology Research Institute, 807-1, Shuku-machi, Tosu,Saga, OK, 841-0052, Japan, +81-942-81-3624, +81-942-81-3657
Hideaki Maeda
Affiliation:
maeda-h@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Micro-&Nano-Space Chemistry Group Nanotechnology Research Institute, 807-1, Shuku-machi, Tosu, Saga, 841-0052, Japan
Get access

Abstract

Zn1−xMgxO films with wurtzite structure were electrochemically grown on the conductive glass substrates from a 0.1mol/L magnesium nitrate aqueous solution containing 0.001mol/L zinc Sulfate kept at 323K. With a decrease in the cathodic potential, Mg/(Zn+Mg) atomic ratios of Zn1−xMgxO films decreased and the lattice parameter for c axes decreased. The band gap energy of Zn1−xMgxO films increased with an increase of Mg/(Zn+Mg) atomic ratio. Thus, Mg/(Mg+Zn) atomic ratio and the bandgap energy of these Zn1−xMgxO films will be controlled by the cathodic potential.

Keywords

electrochemical synthesisII-VIoxide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1035: Symposium L – Zinc Oxide and Related Materials–2007 , 2007 , 1035-L05-25
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Makino, T., Segawa, Y., Yoshida, S., Tsukazaki, A., Ohtomo, A. and Kawasaki, M., Appl. Phys. Lett., 85, 759 (2004)10.1063/1.1776630Google Scholar
[2] Ohtomo, A., Kawasaki, M., Koida, T., Masubuchi, K., Koinuma, H., Sakurai, Y., and Segawa, Y., Appl. Phys. Lett., 72, 2466 (1998)10.1063/1.121384Google Scholar
[3] Matsubara, K., Tampo, H., Shibata, H., Yamada, A., Fons, P., Iwata, K. and Niki, S., Appl. Phys. Lett., 85, 1374 (2004)Google Scholar
[4] Makino, T., Segawa, Y., Kawasaki, M., Ohtomo, A., Shiroki, R., Tamura, K., Yasuda, T. and Koinuma, H., 26, 1237 (2001)10.1063/1.1350632Google Scholar
[5] Izaki, M. and Omi, T., J. Electrochem. Soc., 143, L53 (1996)10.1149/1.1836529Google Scholar
[6] Ishizaki, H., Izaki, M. and Ito, T., J. Electrochem. Soc., 148, C540 (2001)10.1149/1.1382592Google Scholar
[7]Ishizaki, H., Imaizumi, M., Matsuda, S., Izaki, M. and Ito, T., Thin Solid Films, 411, 65 (2002)10.1016/S0040-6090(02)00189-XGoogle Scholar
[8] Izumi, F. and Ikeda, T., Mater. Sci. Forum, 198, 321 (2000)Google Scholar
[9]Ishizaki, H. and Yamada, N., Electrochemical and Solid-State Letters, 9, C178 (2006)10.1149/1.2336986Google Scholar
[10] Dona, J. M., J. Electrchem. Soc., 141, 205 (1994)10.1149/1.2054685Google Scholar
[11] Lüth, H., Solid Surfaces Interfaces and Thin Films, p51, Springer (1966)Google Scholar