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Electrical Behavior of Pure and Cu Doped Diamondlike Carbon Prepared by Pulsed Laser Deposition

Published online by Cambridge University Press:  10 February 2011

Q. Wei ,
A. K. Sharma ,
S. Yamolenko ,
J. Sankar  and
J. Narayan
Q. Wei
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Dept of Mechanical Engineering, McNair Hall, North Carolina A&T State University, Greensboro, NC 27411, quiming@ncat.edu
A. K. Sharma
Affiliation:
Dept of Materials Science and Engineering, Burlington Labs, P. 0. Box 7916, North Carolina State University, Raleigh, NC 27695-7916
S. Yamolenko
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Dept of Mechanical Engineering, McNair Hall, North Carolina A&T State University, Greensboro, NC 27411, quiming@ncat.edu
J. Sankar
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Dept of Mechanical Engineering, McNair Hall, North Carolina A&T State University, Greensboro, NC 27411, quiming@ncat.edu
J. Narayan
Affiliation:
Dept of Materials Science and Engineering, Burlington Labs, P. 0. Box 7916, North Carolina State University, Raleigh, NC 27695-7916
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Abstract

We have prepared pure diamondlike carbon films and Cu doped diamondlike carbon films through pulsed laser deposition. The Cu concentration does not exceed 3.0 atomic percent. Electrical conduction studies were carried out on the films to understand the electrical transport mechanism. It was found that both pure DLC and Cu doped DLC are of p-type conduction. Incorporation of Cu into the DLC films decreases the resistivity significantly. Transmission electron microscopy and radial distribution function analyses showed that the DLC films are typical tetrahedral amorphous carbon. The conductivity of Cu doped DLC films exhibited T1/2 temperature dependence, rather than the T1/4 dependence (Mott-Davis law). This dependence was observed within a wide temperature range (from below liquid nitrogen temperature to near room temperature). The T1/2 dependence was explained on the basis of the Efros-Shklovskii model which considers the long range Coulomb interaction between localized states

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 593: Symposium U – Amorphous & Nanostructured Carbon , 1999 , 377
Copyright
Copyright © Materials Research Society 2000

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References

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