Hostname: page-component-77c89778f8-m42fx Total loading time: 0 Render date: 2024-07-18T02:02:01.496Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical and Optical Properties of Vanadium in Omvpe-Grown GaAs

Published online by Cambridge University Press:  28 February 2011

W. S. Hobson ,
S. J. Pearton ,
V. Swaminathan ,
A. S. Jordan ,
Y. J. Kao ,
N. Mk Haegel  and
H. Kanber
W. S. Hobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974
V. Swaminathan
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974
A. S. Jordan
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974
Y. J. Kao
Affiliation:
UCLA, Los Angeles, CA 90024
N. Mk Haegel
Affiliation:
UCLA, Los Angeles, CA 90024
H. Kanber
Affiliation:
Hughes Aircraft Company, Torrance, CA 90505
Get access

Abstract

The electrical and photoluminescent properties of vanadium incorporated into GaAs epitaxial layers from a VO(OC2 H5)3 source during organometallic vapor phase epitaxy were examined. The vanadium concentration in the GaAs was controllably varied from 1016 to 1018 atoms cm−3. Deep level transient spectroscopy showed the presence of an electron trap at Ec – 0.15 eV which increased in concentration with vanadium content of the epitaxial layers. A maximum value of 8 × 1015 cm−3 for this trap was obtained. There were no midgap electron traps associated with vanadium. In intentionally Si-doped epitaxial layers, co-doping with vanadium was observed to have no effect in reducing the carrier density when the Si concentration was > 4 × 1016 cm−3. The net carrier concentration profiles resulting from 29 si implantation into GaAs containing 1018 cm−3of total V had sharper tails than for similar implantation into undoped material, indicating the presence of less than 1016 cm−3V-related acceptors. Photoluminescent spectra exhibited the characteristic V+3intracenter emission at 0.65∼0.75 eV. No other deep level photoluminescence was detected. For a V concentration of 1016 cm−3only 2.5 × 1013 cm−3was electrically active. Over the entire V concentration investigated this impurity was predominantly (≥99%) inactive.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 125
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Clerjaud, B., J. Phys. C. Solid State Phys. 18, 3615 (1985) and references therein.Google Scholar
2. Akiyama, M., Kawarada, Y., and Kaminishi, K., J. Cryst. Growth 68, 39 (1984).Google Scholar
3. Akiyama, M., Kawarada, Y., Nishi, S., Ueda, T., and Kaminishi, K., Mat. Res. Soc. Symp. Proc. Vol 67 (1986) ed. Fan, J. C. C. and Poate, J. M. p. 53.CrossRefGoogle Scholar
4. Barrau, J., Sorba, A., Brousseau, B., Brousseau, M., Leotin, J., Binh, P. H., and Reclus, G., Solid State Commun. 62, 753 (1987).CrossRefGoogle Scholar
5. Bol'sheva, Yu. N., Grigor'ev, Yu. A., Omel'yanovskii, E. M., Osvenskii, V. B., Polyakov, A. Ya., and Tishkin, M. V., Sov. Phys. Semicond. 21, 1227 (1987).Google Scholar
6. Brandt, C. D., Hennel, A. M., Pawlowicz, L. M., Dabkowski, F. P., Lagowski, J., and Gatos, H. C., Appl. Phys. Lett. 47, 607 (1985).Google Scholar
7. Clerjaud, B., Naud, C., Deveaud, B., Lambert, B., Plot, B., Bremond, G., Benjeddou, C., Guillot, G., and Nouailhat, A., J. Appl. Phys. 58, 4207 (1985).Google Scholar
8. Gladhov, P. S. and Ozanyan, K. B., Crystal Properties and Preparation 12, 7 (1987).Google Scholar
9. Gladhov, P. S. and Ozanyan, K. B., in Inst. Phys. Conf. Ser. No. 91, edited by Christou, A. and Rupprecht, H. S., (1987) p. 121.Google Scholar
10. Hennel, A. M., Brandt, C. D., Ko, K. Y., Lagowski, J., and Gatos, H. C., J. Appl. Phys. 62, 163 (1988).Google Scholar
11. Hennel, A. M., Brandt, C. D., Pawlowicz, L. M., and Ko, K. Y., in Semi-Insulating III-V Materials, edited by Kukimoto, H. and Miyazawa, S. (North Holland Publishing, Amsterdam, The Netherlands, 1986) p. 465.Google Scholar
12. Kawarada, Y., Akiyama, M., and Kaminishi, K., in Semi-Insulating III-V Materials, edited by Kukimoto, H. and Miyazawa, S. (North Holland Publishing, Amsterdam, The Netherlands, 1986) p. 509.Google Scholar
13. Terao, H., Sunakawa, J., Ohata, K., and Watanabe, H., in Semi-Insulating II-V Materials, edited by Makram-Ebeid, S. and Tuck, B. (Shiva Publishing, Nantwich, UK, 1982) p. 54.Google Scholar
14. Ulrici, W., Friedland, K., Eaves, L., and Halliday, D. P., Phys. Stat. Sol. (b) 131, 719 Google Scholar
15. Ulrici, W., Kreissl, J., Vasson, A., Vasson, A. M., and En-Naqadi, M., Phys. Stat. Sol. (b) 143, 195 (1987).CrossRefGoogle Scholar
16. Sharma, B. L., Diffusion in Semiconductors, (Trans Tech Publication, Germany, 1970 )Google Scholar