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Effects of Reactive Ion Etching on the Electrical Properties of n-GaN Surfaces

Published online by Cambridge University Press:  21 February 2011

A. T. Ping ,
A. C. Schmitz ,
M. Asif Khan  and
I. Adesida
A. T. Ping
Affiliation:
Center for Compound Semiconductor Microelectronics and Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801
A. C. Schmitz
Affiliation:
Center for Compound Semiconductor Microelectronics and Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801
M. Asif Khan
Affiliation:
APA Optics, Inc., Blaine, MN 55449
I. Adesida
Affiliation:
Center for Compound Semiconductor Microelectronics and Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801
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Abstract

Dry etch damage on n-GaN has been investigated using Pd Schottky diodes fabricated on surfaces etched by conventional reactive ion etching with SiCl4 plasma. The Schottky barrier height and ideality factor were investigated as a function of the plasma self-bias voltage. Current-voltage measurements revealed severe degradation of both the forward and reverse characteristics for plasma self-bias voltages in excess of -150 V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 769
Copyright
Copyright © Materials Research Society 1996

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References

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