Hostname: page-component-f554764f5-sl7kg Total loading time: 0 Render date: 2025-04-12T09:56:01.491Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Reactive Ion Etching on the Electrical Properties of n-GaN Surfaces

Published online by Cambridge University Press:  21 February 2011

A. T. Ping ,
A. C. Schmitz ,
M. Asif Khan  and
I. Adesida
A. T. Ping
Affiliation:
Center for Compound Semiconductor Microelectronics and Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801
A. C. Schmitz
Affiliation:
Center for Compound Semiconductor Microelectronics and Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801
M. Asif Khan
Affiliation:
APA Optics, Inc., Blaine, MN 55449
I. Adesida
Affiliation:
Center for Compound Semiconductor Microelectronics and Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801
Get access

Abstract

Dry etch damage on n-GaN has been investigated using Pd Schottky diodes fabricated on surfaces etched by conventional reactive ion etching with SiCl4 plasma. The Schottky barrier height and ideality factor were investigated as a function of the plasma self-bias voltage. Current-voltage measurements revealed severe degradation of both the forward and reverse characteristics for plasma self-bias voltages in excess of -150 V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 769
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1 Adesida, I., Mahajan, A., Andideh, E., Asif Khan, M., Olson, D. T., and Kuznia, J. N., Appl. Phys. Lett. 63, p. 2777 (1993).Google Scholar
2 Pearton, S. J., Abernathy, C. R., Ren, F., Lothian, J. R., Wisk, P.W., and Katz, A., J. Vac. Sci. Technol.A, 11, p. 1772 (1993).Google Scholar
3 McLane, G. F., Casas, L., Lareau, R. T., Eckart, D. W., Vartuli, C. B., Pearton, S. J., and Abernathy, C. R., J. Vac. Sci. Technol.A, 13, p. 724 (1995).Google Scholar
4 Adesida, I., Ping, A. T., Youtsey, C., Dow, T., Asif Khan, M., Olson, D. T., and Kuznia, J. N., Appl. Phys. Lett, 65, p. 889 (1994).Google Scholar
5 Ping, A. T., Youtsey, C., Adesida, I., Asif Khan, M., Kuznia, J. N., J. Electron. Mat., 24, p. 229 (1995).Google Scholar
6 Pearton, S. J., Lee, J. W., MacKenzie, J. D., Abernathy, C. R., and Shul, R. J., Appl. Phys. Lett., 67, p. 2329 (1995).Google Scholar
7 Ping, A. T., Schmitz, A. C., Asif Khan, M., and Adesida, I., submitted to Electronic Letters.Google Scholar
8 Strite, S. and Morkoç, H., J. Vac. Sci. Technol. B, 10, p. 1237 (1992).Google Scholar
9 Pang, S. W., Lincoln, G. A., McClelland, R. W., DeGraff, P. D., Geis, M. W., and Piacentini, W. J., J. Vac. Sci. Technol. B, 1, p. 1334 (1983).Google Scholar