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The Effects of Process Variation on the Parametric Model of the Static Impedance Behavior of Programmable Metallization Cell (PMC)

Published online by Cambridge University Press:  03 June 2014

Mehdi Saremi ,
Saba Rajabi ,
Hugh J. Barnaby  and
Michael N. Kozicki
Mehdi Saremi
Affiliation:
Arizona State University, 650 E. Tyler Mall, Tempe, AZ, 85287-8406, U.S.A.
Saba Rajabi
Affiliation:
Arizona State University, 650 E. Tyler Mall, Tempe, AZ, 85287-8406, U.S.A.
Hugh J. Barnaby
Affiliation:
Arizona State University, 650 E. Tyler Mall, Tempe, AZ, 85287-8406, U.S.A.
Michael N. Kozicki
Affiliation:
Arizona State University, 650 E. Tyler Mall, Tempe, AZ, 85287-8406, U.S.A.
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Abstract

Among the new non-volatile memories gaining attention as a potential replacement for flash technology is the programmable metallization cell (PMC) that works by creating and dissolving a conductive bridge across a solid electrolyte film. This enables switching between a high resistance state (HRS) and a low resistance state (LRS). The dominant mechanism for resistance switching is field dependent ion transport in the film. In this work, we examine, through numerical simulation, the effects of process variation on the impedance characteristics of the PMC in both HRS and LRS, by changing key parameters of the device. These parameters include the material bandgap, affinity and permittivity of each device layer. Finally, we show which parameters have the greatest effects on the impedance behavior.

Keywords

memorysimulationion-solid interactions
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1692: Symposium CC – New Materials and Processes for Interconnects, Novel Memory and Advanced Display Technologies , 2014 , mrss14-1692-cc09-39
Copyright
Copyright © Materials Research Society 2014 

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References

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