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Effect of the Surface Nanomorphology on the Growth of Al Whiskers Formed by Glancing Angle Deposition on a High Temperature Substrate

Published online by Cambridge University Press:  01 February 2011

Kenji Hamachi ,
Motofumi Suzuki ,
Kaoru Nakajima  and
Kenji Kimura
Kenji Hamachi
Affiliation:
onionring_kenji@ybb.ne.jp, Kyoto University, Micro Engineering, Nishiitamochicho 6-3-13, Tondabayashi, Osaka, 584-0048, Japan
Motofumi Suzuki
Affiliation:
Kyoto University, Department of Micro Engineering, Kyoto, 606-8501, Japan
Kaoru Nakajima
Affiliation:
Kyoto University, Department of Micro Engineering, Kyoto, 606-8501, Japan
Kenji Kimura
Affiliation:
Kyoto University, Department of Micro Engineering, Kyoto, 606-8501, Japan
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Abstract

We have investigated the effect of the substrate-surface morphology on the growth of Al whiskers grown by high temperature glancing angle deposition (HT-GLAD). Before the HT-GLAD of Al at 390 °C, the morphology of the substrate was systematically modified by depositing nanocolumnar SiO2 layer of thickness between 0 and 100 nm on the flat SiO2 layer. Aluminum whiskers with the width of ≈100 nm and the length ≤ μm are found on all the samples. The number of short whiskers, which can be grown from very small nuclei, depends strongly on the thickness of the SiO2 nanocolumnar layer and shows the maximum at SiO2 thickness of 20 nm. On the other hand, the number of long whiskers, which requires extraordinary amount of Al than that deposited on the side surface of the whikers, is almost independent of SiO2 thickness. These facts suggest that the surface roughness of the substrate plays an important role in the nucleation of the whiskers and that there are some transport processes of Al, which are insensitive to the surface morphology.

Keywords

nanostructuremorphologynucleation & growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1059: Symposium KK – Nanoscale Pattern Formation , 2007 , 1059-KK04-09
Copyright
Copyright © Materials Research Society 2008

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References

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