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Effect of Si Addition on the Reaction Growth and Morphology of an Aluminide Compound in Al-Cu-Si/Ti-W Bilayers

Published online by Cambridge University Press:  25 February 2011

M. Park ,
S. J. Krause  and
S. R. Wilson
M. Park
Affiliation:
Chemical, Bio and Materials Engineering Dept., Arizona State University, Tempe, AZ 85287
S. J. Krause
Affiliation:
Chemical, Bio and Materials Engineering Dept., Arizona State University, Tempe, AZ 85287
S. R. Wilson
Affiliation:
Advanced Custom Technologies, Motorola Semiconductor Products Sector, Mesa, AZ 85202
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Abstract

The effect of the addition of Si to an Al alloy on the reaction morphology of Al12W in Al-Cu-Si/Ti-W bilayers was studied with plan-view and cross-section transmission electron microscopy (TEM). The addition of 0.5 wt.% Si to an Al-0.5Cu alloy film increases multiple spiked growths of the Al12W compound by the reaction of the Al-0.5Cu-0.5Si film with the Ti-W sublayer after heat treatment at 450°C for 30 min. Increasing the Cu and Si content from 0.5 to 1.5% significantly reduced the spiked growth of Al12W into the Al-1.5Cu-1.5Si film. However the spike number density remained high compared to the reaction of a binary Al-1.5Cu film with the Ti-W layers. The result indicates that the addition of Si to form a ternary Al-Cu-Si film results in a more irregular, less planar Al12W morphology. This morphology can have a detrimental effect on thermal stability and electromigration resistance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 645
Copyright
Copyright © Materials Research Society 1993

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References

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