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Effect of Interdiffusion on the Subbands in an In0.65Gs0.35As/GaAs Multiple-quantum well Structure on GaAs Substrate at 1.55μm Operation Wavelength

Published online by Cambridge University Press:  10 February 2011

M. C. Y. Chan ,
E. Herbert Li  and
K. S. Chan
M. C. Y. Chan
Affiliation:
Department of Electrical & Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong
E. Herbert Li
Affiliation:
Department of Electrical & Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong
K. S. Chan
Affiliation:
Department of Physics and Materiads Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong.
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Abstract

Analysis of high indium concentration in interdiffused In0.65Gs0.35As/GaAs multiple quantum well (MQW) structure on GaAs Substrate is being studied. This material can achieve operating wavelengths around 1.5gtm Ifor applications in fiber optics communications. The large lattice mismatch problem (over 4.5% in this study) can be solved by using a linearly-graded InGaAs buffer layer for reducing any dislocation between the adjacent layers. Interdiffusion in the MQW structure can modify the composition profile in order to tailor the optical absorption and refraction properties. Results show that this system can have promising device performance operates at around 1.55μm and which base on the more matured and reliable GaAs technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 283
Copyright
Copyright © Materials Research Society 1996

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