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Effect of GaAs Surface Treatments on Lanthanum Silicate High-K Dielectric Gate Stack Properties

Published online by Cambridge University Press:  01 February 2011

Daniel J Lichtenwalner ,
Rahul Suri  and
Veena Misra
Daniel J Lichtenwalner
Affiliation:
djlichte@ncsu.edu, North Carolina State University, Materials Science and Engineering, 1001 Capability Drive, 214 Research Building 1, Raleigh, NC, 27695-7919, United States, 919-515-6624, 919-515-3419
Rahul Suri
Affiliation:
rsuri@ncsu.edu, North Carolina State University, Electrical and Computer Engineering, Raleigh, NC, 27695-7920, United States
Veena Misra
Affiliation:
vmisra@ncsu.edu, North Carolina State University, Electrical and Computer Engineering, Raleigh, NC, 27695-7920, United States
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Abstract

The properties of lanthanum silicate (LaSiOx) gate stacks on GaAs substrates have been examined, comparing different GaAs pretreatments; namely a) as-received, b) HCl-treated, and c) sulphur-treated. X-ray photoelectron spectroscopy of the As 3d, Ga 3d, and Ga 2p binding energy peaks were used to reveal the chemical nature of the stacks. After a 400 °C in situ anneal in 10−6 torr pO2, the LaSiOx chemically reduces the As oxides from the as-received GaAs, while Ga oxide species remain. HCl and S-treated GaAs similarly show no As oxides, and a much smaller degree of Ga oxides than the as-received case. The Ga-S bonding may be responsible for lowering the tendency towards Ga oxidation for the S-treated case. On p-type, Zn-doped GaAs, 3.0 nm lanthanum silicate films produce MOS device EOT values of 2.38 nm, 1.51 nm, and 1.37 nm, on as-received, HCl-treated, and S-treated substrates, respectively. The high EOT for the as-received GaAs corresponds to the thicker Ga oxide and elemental As at the interface. The decreases in both Ga oxide and elemental As at the interface of the S-treated stack appears to be related to it having the lowest EOT devices.

Keywords

dielectric propertiesx-ray photoelectron spectroscopy (XPS)lanthanide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1073: Symposium H – Materials Science of High-k Dielectric Stacks—From Fundamentals to Technology , 2008 , 1073-H06-04
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Lichtenwalner, D.J. Jur, J.S. Kingon, A.I. Agustin, M.P. Yang, Y. Stemmer, S. Goncharova, L.V., Gustafsson, T. and Garfunkel, E. J. Appl. Phys. 98(2), 4314 (2005).Google Scholar
2. Lichtenwalner, D.J. Jur, J.S. Inoue, N. and Kingon, A.I. ECS Trans. 11(4), 319–333 (2007).Google Scholar
3. Alshareef, H.N. Quevedo-Lopez, M., Wen, H.C. Harris, R. Kirsch, P. Majhi, P. Lee, B.H. Jammy, R., Lichtenwalner, D.J. Jur, J.S. and Kingon, A.I. Appl. Phys.Lett. 89, 232103 (2006).Google Scholar
4. Robertson, J. and Falabretti, B. Mater. Sci. Eng. B 135, 267 (2006).Google Scholar
5. Passlack, M. “Methodology for Development of High-κ Stacked Gate Dielectrics on III-V Semiconductors,” Materials Fundamentals of Gate Dielectrics, ed. Demkov, A.A. and Navrotsky, A. (Springer, 2005) pp. 403–467.Google Scholar
6. Kim, Hyun-Jo, Kim, Hyeong-Do, ‘Fitt’ program for XPS curve analysis, http://escalab.snu.ac.kr/̃berd/Fitt/fitt.html, accessed May 2006.Google Scholar
7. Yang, J.-K., Kang, M.-G., and Park, H.-H., J. Appl. Phys. 96, 4811 (2004).Google Scholar
8. Shahrjerdi, D. Garcia, D.I.-Gutierrez, Akyol, T. Bank, S.R. Tutuc, E. Lee, J.C. and Banerjee, S.K., Appl. Phys. Lett. 91, 193503 (2007).Google Scholar
9. Helsen, L. Bulck, E. Van den, Bael, M.K. Van, Vanhoyland, G. and Mullens, J. Thermochimica Acta 414, 145 (2004).Google Scholar
10.CVC program: Hauser, J.R. and Ahmed, K. Proc. AIP Conf., 235 (1998); modified by Rashmi Jha and Steven Novak.Google Scholar
11. Suri, R. Lichtenwalner, D.J. and Misra, V. Appl. Phys. Lett. 92, 243506 (2008).Google Scholar
12. Lichtenwalner, D.J. Jur, J.S. Jha, R. Inoue, N. Chen, B. Misra, V. and Kingon, A.I. J. Electrochem. Soc. 153(9), F210 (2006).Google Scholar
13. Sivasubramani, P. Boscke, T.S. Huang, J. Young, C.D., Kirsch, P.D. Krishnan, S.A. Quevedo-Lopez, M.A., Govindarajan, S. Ju, B.S. Harris, H.R. Lichtenwalner, D.J. Jur, J.S. Kingon, A.I., Kim, J. Gnade, B.E. Wallace, R.M. Bersuker, G. Lee, B.H. and Jammy, R. Inter. Symp. on VLSI Technol., Dig. Tech. Papers, pp.68–69 (2007).Google Scholar