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The Effect of Dopant Concentration on the Native Oxide Growth on Silicon Wafer Surface

Published online by Cambridge University Press:  25 February 2011

Y. Ishimaru ,
M. Yoshiki  and
T. Hatanaka
Y. Ishimaru
Affiliation:
Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba–cho, Saiwai–ku, Kawasaki, Kanagawa 210, Japan
M. Yoshiki
Affiliation:
Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba–cho, Saiwai–ku, Kawasaki, Kanagawa 210, Japan
T. Hatanaka
Affiliation:
Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba–cho, Saiwai–ku, Kawasaki, Kanagawa 210, Japan
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Abstract

The effects of dopant type and dopant concentration on the native oxide growth in air on the silicon surface were investigated. The oxide thickness was measured by X-ray photoelectron spectrometry (XPS). The oxide was thicker on n-type Si than on p-type Si in early oxidation. The oxide increased linearly with the dopant concentration. This enhancement of oxidation was assumed to be caused by vacancies near the surface in the silicon bulk.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 405
Copyright
Copyright © Materials Research Society 1992

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References

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