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Effect of Boron on Diffusion Barrier Characteristics of Pecvd W-B-N Films

Published online by Cambridge University Press:  10 February 2011

Dong Joon Kim ,
Yong Tae Kim  and
Jong-Wan Park
Dong Joon Kim
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul, Korea, ytkim@kistmail.kist.re.kr Dept. of Metallurgical Engineering, Hanyang University, 17, Haengdang-dong, Seongdong-ku, Seoul, 133–791
Yong Tae Kim
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul, Korea, ytkim@kistmail.kist.re.kr
Jong-Wan Park
Affiliation:
Dept. of Metallurgical Engineering, Hanyang University, 17, Haengdang-dong, Seongdong-ku, Seoul, 133–791
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Abstract

The effects of B and N addition on the phase transition and barrier performance of the plasma deposited W-B-N films are investigated. The W-B-N films have chemical compositions in the range from W67N33 to W38B42N20 corresponding to the flow ratio of B10H14/NH3. Among the films of various compositions of B and N, W46B25N29 film shows excellent thermal stability against the Cu diffusion because the W46B25N29 film keeps the amorphous state even after the annealing at 800°C for 30 min. Resonance backscattering and x-ray photoemission spectra for B and N atoms before and after the annealing process indicate that the amorphous state is retained due to the formation of the B-N bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 417
Copyright
Copyright © Materials Research Society 1998

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References

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