Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-17T16:34:56.892Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Atomic Hydrogen on Impurity Reduction in Mombe-Grown GaAs

Published online by Cambridge University Press:  28 February 2011

Y.C. Kao ,
T.S. Kim ,
H.D. Shih ,
S. Matteson ,
W.M. Duncan  and
D.L. Farrington
Y.C. Kao
Affiliation:
Texas Instruments Inc., Central Research Laboratories, P.O. Box 655936, MS147, Dallas, TX 75265
T.S. Kim
Affiliation:
Texas Instruments Inc., Central Research Laboratories, P.O. Box 655936, MS147, Dallas, TX 75265
H.D. Shih
Affiliation:
Texas Instruments Inc., Central Research Laboratories, P.O. Box 655936, MS147, Dallas, TX 75265
S. Matteson
Affiliation:
University of North Texas, Center for Materials Characterization, Denton, TX 76203
W.M. Duncan
Affiliation:
Texas Instruments Inc., Central Research Laboratories, P.O. Box 655936, MS147, Dallas, TX 75265
D.L. Farrington
Affiliation:
Texas Instruments Inc., Central Research Laboratories, P.O. Box 655936, MS147, Dallas, TX 75265
Get access

Abstract

In this paper, the effect of atomic hydrogen on carbon impurity incorporation during the metalorganic-molecular-beam-epitaxy (MOMBE) growth of GaAs is studied. Atomic hydrogen was introduced into the MOMBE chamber during the growth by cracking molecular hydrogen with a high temperature cracker cell. Atomic hydrogen appears to be effective in reducing the background doping level of MOMBE-grown GaAs, presumably by reacting with hydrocarbon radicals. Background doping levels as low as 4 × 1014 cm−3 and room temperature hole mobilities as high as 430 cm2/V-sec were achieved. This result demonstrates that it is feasible to grow high quality GaAs films in MOMBE without using AsH3 or a high flux of As4by introducing atomic hydrogen into the chamber during the growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 57
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Weber, J., Pearton, S.J. and Dautremont-Smith, W.C., Appl. Phys. Lett. 49, 1181 (1986).Google Scholar
[2] Pearton, S. J., Dautremont-Smith, W.C., Chevallier, J., Tu, C.W., and Cummings, K.D., J. Appl. Phys. 59, 2821 (1986).Google Scholar
[3] Pan, N., Bose, S.S., Kim, M.H., Stillman, G.E., Chambers, F., Devane, G., Ito, C.R., and Feng, M., Appl. Phys. Lett. 51, 596 (1987).Google Scholar
[4] Nagata, K., Iimura, Y., Aoyagi, Y., Namba, S., Den, S., and Moritani, A., J. Crystal Growth 93, 265 (1988).Google Scholar
[5] Houng, Y.-M., Pao, Y.-C., and McLeod, P., in this volume.Google Scholar
[6] Shih, H.D., Kim, B., and Wurtele, M., Electron. Lett. 23, 1141 (1987).Google Scholar
[7] Kiinzel, H., Knecht, J., Jung, H., Wiistel, K., and Ploog, K., Appl. Phys. A 28, 167 (1982).Google Scholar
[8] Skromme, B.J., S.S. Bose, Lee, B., Low, T.S., Lepkowski, T.R., DeJule, R.Y., Stillman, G.E., and Hwang, J.C.M., J. Appl. Phys. 58, 4685 (1985).Google Scholar
[9] Pao, Y.-C., Liu, D., Lee, W.S., and Harris, J.S., Appl. Phys. Lett. 48, 1291 (1986).CrossRefGoogle Scholar