Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-18T15:14:50.205Z Has data issue: false hasContentIssue false
  • English
  • Français

Dose Measurements on Micro- and Submicrometer Implanted Structures using Thermal-Waves

Published online by Cambridge University Press:  25 February 2011

W. Lee Smith ,
Robert H. Reuss ,
William Clark  and
David Rensch
W. Lee Smith
Affiliation:
Therma-Wave, Inc., Fremont, CA 94539
Robert H. Reuss
Affiliation:
Motorola SRDL, Phoenix AZ 85008
William Clark
Affiliation:
Hughes Research Laboratory, Malibu, CA 90265
David Rensch
Affiliation:
Hughes Research Laboratory, Malibu, CA 90265
Get access

Abstract

Thermal-wave measurement techniques have recently been developed for measuring ion implant dose over the range 1E10 to 1E16 ions/cm2. The spatial resolution obtained with this method is 1 µm, an improvement of approximately 3000X over that of other dose monitors. This resolution capability together with the fact that the thermal-wave measurements are noncontact and nondestructive, permit dose measurements to be made on implanted areas (device features) on patterned wafers, as well as on test wafers.

A new potential application of the thermal-wave technique is the measurement of dose implanted by focused ion beam (FIB). Since the FIB technique is a high-resolution, direct-write process and since current FIB systems are limited to scan fields of less than 0.5 mm2, a high-resolution probe to monitor dose and uniformity is necessary.

In this paper, we report the measurement of ion dose implanted by focused beams into areas of ‹10−2 mm2. Even single FIB-implanted lines of 0.20 µm width have been detected, and programmed lateral dose variations measured. Experimental results demonstrating the potential of this technique are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 247
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Rosencwaig, A., Photoacoustics and Photoacoustic Spectroscopy, (Academic Press, New York, 1980), also Science, 218, 223 (1982).Google ScholarPubMed
2. Rosencwaig, A., Opsal, J. and Willenborg, D. L., Appl. Phys. Lett. 43, 166 (1983)CrossRefGoogle Scholar
3. Opsal, J., Rosencwaig, A., and Willenborg, D. L., Applied Optics 22, 3169 (1983).CrossRefGoogle Scholar
4. Smith, W. L. and Lin, C.-H., Paper T28 at the 5th Intl. Conf. on Ion Implantation Equipment and Techniques, July 1984, (Jeffersonville, VT).Google Scholar
5. Smith, W. Lee, Taylor, Michael W. and Schuur, John, Paper 530-29 at SPIE Conference on Advanced Applications of Ion Implantation, January 1985, (Los Angeles, CA).Google Scholar
6. Smith, W. Lee, Powell, R. A., and Woodhouse, J. D., Paper 530-207 at SPIE Conference on Advanced Applications of Ion Implantation, January 1985, (Los Angeles, CA).Google Scholar
7. Smith, W. L., Rosencwaig, A., Willenborg, D. L., and Taylor, M., Bull. Am. Phys. Soc. 30, 374 (1985).Google Scholar
8. Dunn, G. and Kellogg, E. M., Semiconductor Int., 7, 139 (1984) and M. Hassel Shearer and G. Cogswell, Semiconductor Int. 7, 145 (1984).Google Scholar
9. Reuss, R. H., Morgan, D., Greeneich, E. W., Clark, W. M. and Rensch, D. B., V. Vac. Sci. Technol. B3, 62 (1985).CrossRefGoogle Scholar
10. Shukuri, S., Wada, Y., Masuda, H., Ishitan, T., and Tamura, M., Jap. J. Appl. Phys., 23, L543 (1984).CrossRefGoogle Scholar
11. Miyauchi, E., Arimoto, H., Bamba, Y., Takamori, A., and Hashimoto, H., Nuclear Instru. Meth. B6, 183 (1985).CrossRefGoogle Scholar
12. Wang, V., Ward, J. W., and Seliger, R. L., J. Vac. Sci. Technol., 19, 1158 (1981).CrossRefGoogle Scholar
13.Therma-Probe Systems, products of Therma-Wave, Inc., Fremont, CA 94539.Google Scholar