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Direct Write Metallizations for Ag and Al

Published online by Cambridge University Press:  10 February 2011

C. J. Curtis ,
A. Miedaner ,
T. Rivkin ,
J. Alleman ,
D. L. Schulz  and
D. S. Ginley
C. J. Curtis
Affiliation:
National Renewable Energy Laboratory, Golden, CO USA 80401
A. Miedaner
Affiliation:
National Renewable Energy Laboratory, Golden, CO USA 80401
T. Rivkin
Affiliation:
National Renewable Energy Laboratory, Golden, CO USA 80401
J. Alleman
Affiliation:
National Renewable Energy Laboratory, Golden, CO USA 80401
D. L. Schulz
Affiliation:
National Renewable Energy Laboratory, Golden, CO USA 80401
D. S. Ginley
Affiliation:
National Renewable Energy Laboratory, Golden, CO USA 80401
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Abstract

We have employed inks containing nanometer-sized particles of Ag and Al (nano-Ag and nano-Al, respectively) as precursor inks for the formation of contacts to n- and p-type Si, respectively. The particles as formed by the electroexplosion process were dispersed in toluene, applied to Si and annealed above the respective eutectic temperatures. In the case of nano-Ag, this directly yields an ohmic contact. However, the nano-Al was found to be coated with an oxide layer that impairs the formation of an ohmic contact. A chelating chemical etch involving treatment with hexafluoroacetylacetone was developed to remove this oxide coat. This treated nano-Al produced a good ohmic contact. Smooth, pure Ag films have also been deposited by spray printing organometallic inks prepared from Ag(hfa)(SEt2) and Ag(hfa)(COD). These films are deposited in one step onto heated glass and Si substrates at one atmosphere pressure. The films show resistivities of ∼2 µΩ·cm. These inks appear to be amenable to ink-jet printing of Ag lines and as a low temperature glue for the Ag nanoparticles for thicker metallizations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 624: Symposium V – Materials Development for Direct Write Technologies , 2000 , 59
Copyright
Copyright © Materials Research Society 2000

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References

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