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Development of Human IgE Biosensor Using TFBAR Devices with Shear Mode ZnO Piezoelectric Thin Films

Published online by Cambridge University Press:  22 May 2014

Ying-Chung Chen ,
Wei-Tsai Chang ,
Chien-Chuan Cheng ,
Jia-Ming Jiang  and
Kuo-Sheng Kao
Ying-Chung Chen
Affiliation:
Department of Electrical Engineering, National Sun Yat-Sen University, No.70 Lienhai Rd., Kaohsiung 80424, Taiwan.
Wei-Tsai Chang
Affiliation:
Department of Electrical Engineering, National Sun Yat-Sen University, No.70 Lienhai Rd., Kaohsiung 80424, Taiwan.
Chien-Chuan Cheng
Affiliation:
Department of Electronic Engineering, De Lin Institute of Technology, No.1, Ln. 380, Qingyun Rd., Tucheng Dist, New Taipei City 23654, Taiwan.
Jia-Ming Jiang
Affiliation:
Department of Electrical Engineering, National Sun Yat-Sen University, No.70 Lienhai Rd., Kaohsiung 80424, Taiwan.
Kuo-Sheng Kao*
Affiliation:
Department of Computer and Communication, Shu-Te University, No.59, Hengshan Rd., Yanchao Dist., Kaohsiung City 82445, Taiwan.
*
*Email: kks@stu.edu.tw
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Abstract

A novel allergy biosensor is designed and fabricated by using thin film bulk acoustic resonator (TFBAR) devices with shear mode ZnO piezoelectric thin films. To fabricate TFBAR devices, the off-axis RF magnetron sputtering method for the growth of piezoelectric ZnO piezoelectric thin films is adopted. The influences of the relative distance and sputtering parameters are investigated. In this report, the piezoelectric ZnO thin films with tilting angle are set by controlling the deposition parameters. The properties of the shear mode ZnO thin films are investigated by X-ray diffraction and scanning electron microscopy. The frequency response is measured using an HP8720 network analyzer with a CASCADE probe station. The resonance frequency of the shear mode is 796.75 MHz. The sensitivity of the shear mode is calculated to be 462.5 kHz·cm2/ng.

Keywords

thin filmsensoracoustic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1599: Symposium P – Biological and Bioconjugated Materials for Electronic Devices , 2014 , jsapmrs13-1599-6594
Copyright
Copyright © Materials Research Society 2014 

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References

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