Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-17T18:05:48.909Z Has data issue: false hasContentIssue false
  • English
  • Français

Depth Profiling of Solution-Deposited Lead Zirconate Titanate Thin Films by Radio Frequency Glow Discharge Atomic Emission Spectroscopy (RF-GDAES)

Published online by Cambridge University Press:  10 February 2011

K. S Brinkman ,
R. W. Schwartz ,
R. K Marcus  and
A. Anfone
K. S Brinkman
Affiliation:
Department of Ceramic and Materials Engineering, Clemson University Clemson, SC 29634–0907 bob.schwartz@ces.clemson.edu
R. W. Schwartz
Affiliation:
Department of Ceramic and Materials Engineering, Clemson University Clemson, SC 29634–0907 bob.schwartz@ces.clemson.edu
R. K Marcus
Affiliation:
Department of Chemistry, Clemson University, Clemson, SC 29634
A. Anfone
Affiliation:
Department of Chemistry, Clemson University, Clemson, SC 29634
Get access

Abstract

Compositional depth profiles have been obtained on chemical solution deposited lead zirconate titanate (PZT) thin films using radio-frequency glow discharge atomic emission spectroscopy. The technique is very rapid, requiring less than one minute for complete multi-element depth profiling of films and multilayer substrates. In the present study, the method was employed to obtain compositional profiles of the various metallic (Pb, Zr, Ti, Si) and organic-related (C, H, O) species that are present in the films and underlying device. Preliminary results using this relatively new technique are reported for PZT films deposited by an aqueous acetate process and heat treated at temperatures ranging from 300 and 700°C. The initial results from these investigations suggest that Pb volatilization occurs at temperatures as low as those typically encountered during the pyrolysis step. Significant interdiffusion of the Pb into the underlying Pt electrode at this temperature is also suggested. Effects of modifying ligand on film thickness and organic decomposition behavior were also observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 399
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Otsuki, T. and Arita, K., Integrated Ferroelectrics, 17 (1–4), 31 (1997).Google Scholar
2. Kim, J. H., Wang, L., Aurn, S. M., Li, L., Yoon, Y. S., and Polla, D. L., Integrated Ferroelectrics, 15 (1–4), 325 (1997).Google Scholar
3. Schwartz, R. W., Chem. Mater., 9 (11), 2325 (1997).Google Scholar
4. Tani, T., Payne, D. A., J. Am. Ceram. Soc., 72 (5), 1242 (1994).Google Scholar
5. Marcus, R. K., Harville, T. R., Mei, Y., Shick, C. R. Jr, Anal. Chem., 68, 902A (1994).Google Scholar
6. Marcus, R. K., J. Anal. At. Spectrom., 11, 821 (1996).Google Scholar
7. Parker, M., Hartenstein, M. L., Marcus, R. K., Anal. Chem., 68, 4213(1996).Google Scholar
8. Hartenstein, M. L., Marcus, R. K., J. Anal. At. Spectrom., 12, 1027(1997).Google Scholar
9. Lin, C. T., Li, L., Webb, J. S., Lipeless, R. A. and Leung, M. S., Integrated Ferroelectrics, 3, 333(1993).Google Scholar
10. Wright, J. S. and Francis, L. F., Mat. Res. Soc. Symp. Proc., 433, 357(1996).Google Scholar
11. Maeder, T., Sagalowicz, L., and Murat, P., Jpn J Appl. Phys. Part 1, 37 (4A), 2007 (1998).Google Scholar
12. Harville, T. R., and Macus, R. Kenneth, Anal. Chem., 67, 1271 (1995).Google Scholar
13. Amanuma, K., Hase, T., and Miyasaka, Y., Appl. Phys. Lett., 65 (24), 3140 (1994).Google Scholar
14. Schwartz, R. W., Dimos, D., Lockwood, S. J., and Tortes, V. M., Integrated Ferroelectrics, 4, 165, (1994).Google Scholar
15. Schwartz, R. W., Boyle, T. J., Voigt, J. A., and Buchheit, C. D., Ceramic Transactions,” Ferroic Materials: Design, Preparation, and Characterization, 43, 145, (1994).Google Scholar