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Correlation Between Resistivity Characteristics and Electronic Structure Parameters of the Ni-Pd-P Amorphous Alloys

Published online by Cambridge University Press:  17 March 2011

Mykola Babich
Affiliation:
Taras Shevchenko National Kiev university, Department of Physics, Kyiv, Ukraine
Olesya Nakonechna
Affiliation:
Taras Shevchenko National Kiev university, Department of Physics, Kyiv, Ukraine
Mykhailo Semen'ko
Affiliation:
Taras Shevchenko National Kiev university, Department of Physics, Kyiv, Ukraine
Mykola Zakharenko
Affiliation:
Taras Shevchenko National Kiev university, Department of Physics, Kyiv, Ukraine
Gennagy Yeremenko
Affiliation:
Taras Shevchenko National Kiev university, Department of Physics, Kyiv, Ukraine
Alain R. Yavari
Affiliation:
LTPCM-CNRS, INPG, St.-Martin-d-Heres, France
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Abstract

The temperature dependencies of resistivity of the Ni-Pd-P-based amorphous alloys (P content was varied from 14 to 23 at. %) have been measured in a wide temperature range using the standard four-probe method. The temperature coefficients of resistivity (TCR) have been calculated. TCR value is decreased with P content increasing and becomes negative for Ni46Pd31P23 alloy. On the other hand, TCR value is increased with Pd content increasing while P content is not changed. Such behavior could be attributed to the electronic transfer effect from Ni to Pd and from P to Ni. These lead to the Fermi level shift to d-band edge and to the increasing influence of the Mott's localized state. The peculiarities caused by structural relaxation processes have been observed at the temperature range of 550 – 620 K. The relaxation process was shown to consist at least of two stages. The kinetics of the crystallization process has been analyzed using the Kissinger method.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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