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Co-Optimization of Si Thin-Film Deposition and Excimer Laser Anneal Processes for Fabrication of High-Performance p-Si TFTs

Published online by Cambridge University Press:  10 February 2011

A.T. Voutsas ,
A. Marmorstein  and
R. Solanki
A.T. Voutsas
Affiliation:
Sharp Microelectronics Tech., Inc., CSEC Group, 5700 NW Pacific Rim Blvd., Camas, WA 98607, atv@sharpwa.com
A. Marmorstein
Affiliation:
EE Department, Oregon Graduate Institute, Beaverton, OR, 97006
R. Solanki
Affiliation:
EE Department, Oregon Graduate Institute, Beaverton, OR, 97006
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Abstract

In this work we have co-optimized the deposition and excimer laser crystallization processes for formation of high quality, low-temperature, p-Si films (LPS). We have found that the post-ELA polysilicon structure is very sensitive to deposition process adjustments, collectively expressed by the deposition rate. At low rates the PECVD Si-film is deposited in the microcrystalline phase (µc-Si). Comparing µc-Si and a-Si film precursors, we have shown that at equivalent annealing conditions (laser energy density) polysilicon films obtained from µc-Si precursor demonstrate improved crystallinity (grain size, defect density). Polysilicon thin film transistors (p-Si TFTs) have been fabricated and characterized using this material and compared to our standard process. We have found that the performance of µc-Si precursor exceeds by 20-50% that of a-Si precursor. Use of µc-Si precursor may also have important implications in reducing substrate damage during ELA process and for widening the ELA process window.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 508: Symposium B – Flat Panel Display Materials - 1998 , January 1998 , 67
Copyright
Copyright © Materials Research Society 1998

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