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A Consistent Model for Disordering of GaAs/AlAs- Superiattices During Zinc Diffusion

Published online by Cambridge University Press:  03 September 2012

H. Zimmermann ,
T. Y. Tan  and
U. Goesele
H. Zimmermann
Affiliation:
Dept. of Mechanical Engineering and Materials Science, School of Engineering, Duke University, Durham, N.C. 27706, USA
T. Y. Tan
Affiliation:
Dept. of Mechanical Engineering and Materials Science, School of Engineering, Duke University, Durham, N.C. 27706, USA
U. Goesele
Affiliation:
Dept. of Mechanical Engineering and Materials Science, School of Engineering, Duke University, Durham, N.C. 27706, USA
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Abstract

A model for the disordering of GaAs/AlAs-superlattices during zinc diffusion, which is consistent with recently established models for gallium self-diffusion and zinc diffusion in GaAs, is presented. Four coupled partial differential equations resulting from the model are solved numerically. In accordance with measured data in the literature, no disordering without zinc can result for temperatures around 600°C. Zinc diffusion, however, produces a large amount of gallium self-interstitials, which leads to a complete disordering of superlattices with a period thickness of 32 nm to a depth of about 0.8 μm within one hour. The used values for the diffusion coefficient and the equilibrium concentration of gallium self-interstitials are a consistent splitting of the gallium interstitial dominated self-diffusion coefficient.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 861
Copyright
Copyright © Materials Research Society 1992

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References

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