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Conduction and Injection in Off-Stoichiometry Oxides
Published online by Cambridge University Press: 22 February 2011
Abstract
Slightly silicon rich oxides or off-stoichiometry oxides (OSO) have been prepared by LPCVD. When R, the nitrous oxide/silane ratio, equals or exceeds 30 these films have the refractive index and CV characteristics of stoichiometric CVD oxide. Injection into these oxides by oxides richer in silicon has been compared with injection into thermal oxides. We find that silicon rich oxides with higher silicon content having the same Research-article values provide the same enhancement of electron injection into thermal oxides and off-stoichiometry oxides. Conduction in off-stoichiometry oxides depends on preparation, but can be accounted for by tunneling between islands.
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- Copyright © Materials Research Society 1988
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