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Comparison of Lateral Field Emitter Characteristics for Titanium Silicide, Poly-Si, and Single Crystal Si Tip

Published online by Cambridge University Press:  10 February 2011

Moo-Sup Lim
Affiliation:
School of Electrical Engineering., Seoul National Univ., Seoul, 151-742, KoreaPhone: +82-2-880-7248, Fax: +82-2-873-0827, E-mail :, mkh@emlab.snu.ac.kr
Cheol-Min Park
Affiliation:
School of Electrical Engineering., Seoul National Univ., Seoul, 151-742, KoreaPhone: +82-2-880-7248, Fax: +82-2-873-0827, E-mail :, mkh@emlab.snu.ac.kr
Min-Koo Han
Affiliation:
School of Electrical Engineering., Seoul National Univ., Seoul, 151-742, KoreaPhone: +82-2-880-7248, Fax: +82-2-873-0827, E-mail :, mkh@emlab.snu.ac.kr
Yearn-Ik Choi
Affiliation:
School of Electrical Eng., Ajou Univ., Wonchun-dong, Suwon 442-749, Kyung-ki do, Korea
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Abstract

We have fabricated poly-Si, Si, and Ti-silicide field emitter arrays employing in-situ vacuum encapsulated lateral field emitter structures and investigated the field emission characteristics such as turn-on voltage, emission current density, and the stability of emission current. Although poly-Si and Si emitter have almost identical turn-on voltages, Si emitter has a sharper turn-on than poly-Si emitter due to its uniform surface. The current densities of poly-Si, and Si emtter are 0.47, 0.43 μA/tip respectively at anode to cathode voltage of 90 V. The turn-on voltage and current density of Ti-silicide emitter are about 31 V, and 1.81 μA/tip at VAK of 90 V. The data of the normalized current fluctuations indicate that Ti-silicide emitter has the most stable current.

Our experiment shows that Ti-silicide is most promising among these three materials due to its low work function, uniform surface, and the stable characteristics.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

1 Higa, K., Nishii, K. and Asano, T., Tech. Dig. 10th Int. Vacuum Microelectronics Conf. pp. 78 (1997)Google Scholar
2 Spindt, C. A., Holland, C. E., Rosenberg, A., and Brodie, I., IEEE Trans. Electron Devices, vol. 38, no. 10, pp. 2355 (1991)Google Scholar
3 Jung, J. H., Ju, B. K., Lee, Y. H., Oh, M. H., and Jang, J., Tech. Dig. IEDM-96, pp. 293 (1996)Google Scholar
4 Wang, C. C., Ku, T.K., Hsieh, L.J., and Cheng, H. C., Jpn. J. Appl. Phys. vol. 35, pp 3681 (1996)Google Scholar
5 Park, C. M., Lim, M. S., Min, B. H., Han, M. K., and Choi, Y. I., Tech. Dig. IEDM-96, pp. 305 (1996)Google Scholar
6 Park, C. M., Lim, M. S., and Han, M. K., IEEE Electron Device Letters, vol. 18, no. 11, November, pp. 538 (1997)Google Scholar