Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-26T20:02:47.822Z Has data issue: false hasContentIssue false
  • English
  • Français

Comparison of Gate Oxide Processing Techniques for Thin Dielectric Films

Published online by Cambridge University Press:  10 February 2011

Pat Schay ,
Fuyu Lin ,
Sergio Ajuria  and
John Stih
Pat Schay
Affiliation:
Advanced Custom Technologies, Motorola, Mesa, AZ 85202
Fuyu Lin
Affiliation:
Advanced Custom Technologies, Motorola, Mesa, AZ 85202
Sergio Ajuria
Affiliation:
Advanced Custom Technologies, Motorola, Mesa, AZ 85202 Semiconductor Technologies Laboratory, Motorola, Austin, TX 78721
John Stih
Affiliation:
Advanced Custom Technologies, Motorola, Mesa, AZ 85202
Get access

Abstract

This paper focuses on establishing a baseline for thin dielectric processes including: low temperature, dilute, stacked (TEOS), oxynitride, and high temperature annealed (grow‐anneal‐grow) oxidation. 105Å (total thickness) gate dielectrics were grown or deposited for this study. The stack oxide showed the highest Vbd yields for both large‐area and edge‐intensive capacitors, but the poorest Qbd. The N2O oxide yielded mediocre Vbd and Qbd. The low temperature and dilute oxides showed early breakdowns, but acceptable Qbd. 900°C thermal gate oxide showed slightly better average Vbd than low temperature and dilute oxides but comparable Qbd. The high temperature annealed oxide appears to have the best electrical performance, but the worst uniformity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 41
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Kim, Y‐S, Okada, Y., Chang, K‐M, Tobin, P.J., Morton, B., Choe, H., Bowers, M., Kuo, C., Chrudimsky, D., Ajuria, S.A., and Yeargain, J.R., “Low‐defect‐density and high‐reliability FETMOS EEPROM's fabricated using furnace N2O Oxynitridation”, IEEE Electron Device Lett., vol. 14, no. 7, p342, 1993.Google Scholar
2 Tseng, H‐H, Tobin, P.J., Hayden, J.D., Chang, K‐M, and Miller, J.W., “Comparison of CVD stacked gate oxide and thermal gate oxide for 0.5‐μm transistors subjected to process‐induced damage”, IEEE Trans. Electron Devices, vol 40, no 3, p613, 1993.Google Scholar
3 Okada, Y., Tobin, P.J., Lakhotia, V., Feil, W.A., Ajuria, S.A., and Hegde, R.I., “Relationship between growth conditions, nitrogen profile, and charge to breakdown of gate oxynitride grown from pure N2O”, Appl. Phys. Lett., 63 (2), pl94, 1993.Google Scholar
4 Okada, Y. and Tobin, P.J., “Hot‐carrier degradation of LDD MOSFET's with gate oxynitride grown in N2O”, IEEE Electron Device Lett., vol 15, no 7, p233, 1994.Google Scholar
5 Bhattacharyya, A. and Vorst, C., J. Electrochem. Soc., 132, pl900, 1985.Google Scholar