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The Chemical Interface of Microwave Plasma Deposited SiO2 Films

Published online by Cambridge University Press:  22 February 2011

C. C. Parks ,
B. Robinson ,
H. J. Leary Jr. ,
K. D. Childs  and
G. J. Coyle Jr.
C. C. Parks
Affiliation:
IBM Corporation, Hopewell Junction, NY 12533
B. Robinson
Affiliation:
IBM Corporation, Hopewell Junction, NY 12533
H. J. Leary Jr.
Affiliation:
IBM Corporation, Hopewell Junction, NY 12533
K. D. Childs
Affiliation:
IBM Corporation, Hopewell Junction, NY 12533
G. J. Coyle Jr.
Affiliation:
IBM Corporation, Hopewell Junction, NY 12533
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Abstract

The bulk and interfacial chemistry of a microwave plasma deposited SiO2 film has been studied. The SiO2 was deposited on single crystal Si<100> using a plasma enhanced chemical vapor deposition (PECVD) technique. The deposition was accomplished by injecting 2% SiH4 in helium downstream of a N20 microwave-generated discharge. Materials properties of these films were characterized using a combination of surface analytical techniques: Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and secondary ion mass spectroscopy (SIMS). The width of the interface was determined by AES-depth profiling to be less than 5.0 nm. Normal and grazing-angle XPS measurements indicated the presence of unique N and Si chemical species at the SiO2/Si interface. The SIMS data confirmed the presence of interfacial and bulk nitrogen, as well as detecting the presence of hydrogen and fluorine in the bulk oxide. The relationship between the analytical results and electrical data, obtained using MOS structures fabricated from the deposited oxide, will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 133
Copyright
Copyright © Materials Research Society 1988

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