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Characterization of Valence Band Offsets in P-SI/SIGE/SI by Space Charge Spectroscopy

Published online by Cambridge University Press:  21 February 2011

K. Schmalz ,
H. RüCker ,
I. N. Yassievich ,
H. G. Grimmeiss ,
W. Mehr ,
H. Frankenfeld ,
H. J. Osten ,
P. Schley  and
I. Babanskaya
K. Schmalz
Affiliation:
Institute of Semiconductor Physics, PF 409, D-15204 Frankfurt (Oder), Germany
H. RüCker
Affiliation:
Institute of Semiconductor Physics, PF 409, D-15204 Frankfurt (Oder), Germany
I. N. Yassievich
Affiliation:
Physico-Technical Institute, Polytechnicheskaya 26, St. Petersburg 194021, Russia
H. G. Grimmeiss
Affiliation:
University of Lund, P. O. Box 118, S-22100 Lund, Sweden
W. Mehr
Affiliation:
Institute of Semiconductor Physics, PF 409, D-15204 Frankfurt (Oder), Germany
H. Frankenfeld
Affiliation:
Institute of Semiconductor Physics, PF 409, D-15204 Frankfurt (Oder), Germany
H. J. Osten
Affiliation:
Institute of Semiconductor Physics, PF 409, D-15204 Frankfurt (Oder), Germany
P. Schley
Affiliation:
Institute of Semiconductor Physics, PF 409, D-15204 Frankfurt (Oder), Germany
I. Babanskaya
Affiliation:
Institute of Semiconductor Physics, PF 409, D-15204 Frankfurt (Oder), Germany
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Abstract

A direct comparison of admittance spectroscopy and DLTS on p-type Si/Si1-xGex/Si quantum wells with x = 0.17 was performed using n+p mesa diodes. The temperature dependence of potential barriers at the QW and of the Fermi level determines the activation energy Ea of the conductance across the QW. From Ea a band offset of ΔEV = 0.16 eV was estimated. DLTS data suggest that hole emission from the QW was observed with an activation energy in correspondence with ΔEV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 389
Copyright
Copyright © Materials Research Society 1994

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References

1 Nauka, K., Kamins, T. I., E.Turner, J., King, C. A., Hoyt, J. L., and F Gibbons, J.; Appl. Phys. Lett., 60 (2), 195 (1992)Google Scholar
2 L.Vescan, , Apetz, R., and Lüth, H., J. Appl. Phys.; 73 (11), 7427 (1993)Google Scholar
3 Schmalz, K., N.Yassievich, I., Rücker, H., Grimmeiss, H. G., Frankenfeld, H., Mehr, W., Osten, H. J., Schley, P.; submitted to Phys. Rev. BGoogle Scholar
4 Yassievich, I. N., Schmalz, K., and Beer, M.; Semicond Sci. Techn. (1993) in pressGoogle Scholar
5 Osten, H. J., G.Lippert, , and Klatt, J.; J. Vac.Sci. Techn., B 10, 1151 (1992)Google Scholar
6 Dietrich, B., Bugiel, E., Klatt, J., Lippert, G., Morgenstern, T., Osten, H. J., and Zaumseil, P. ; J. Appl. Phys. 74 (5), 3177 (1993)Google Scholar
7 van de Walle, C.G and Martin, R. M. ; Phys. Rev., B 34, 5621 (1986)Google Scholar
8 Ni, W. X. and Hansson, G. V. ; Phys. Rev., B 42, 3030 (1990)Google Scholar