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Characteristics of 56 Mev Oxygen Implantation into Si and III-V Semiconductors

Published online by Cambridge University Press:  26 February 2011

S. J. Pearton ,
B. Jalali ,
J. M. Poate ,
J. D. Fox ,
K. W. Kemper ,
C. W. Magee  and
K. S. Jones
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
B. Jalali
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. D. Fox
Affiliation:
Florida State University, Tallahassee, FL 32306
K. W. Kemper
Affiliation:
Florida State University, Tallahassee, FL 32306
C. W. Magee
Affiliation:
Evans East, Inc., Plainsboro, NJ 08836
K. S. Jones
Affiliation:
University of Florida, Gainesville, FL 32611
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Abstract

High energy (56 MeV) oxygen implants into Si, GaAs and InP give rise to sharp, non-Gaussian depth profiles with the distributions skewed towards greater depths. This skewness is probably the result of channeling, and it is a common feature of MeV implants into semiconductors. The ratio of the peak concentration in the depth profile to the concentration at the surface is ≥103 for each material, and the full width at half maximum of each profile is ∼2 μm. The experimental projected ranges for the oxygen are ∼31 μm in GaAs, ∼36 μm in InP and ∼46 μm in Si. These are ∼10% larger than the values predicted by the PRAL code. The photoluminescence intensity from the top 1 μm from the surface of both GaAs and InP is reduced by more than an order of magnitude for 56 MeV oxygen implants at a dose of 1.3 × 1015 cm−2, due to point defect introduction in this region. Potential applications for these high energy implants in electronic and photonic device fabrication will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 271
Copyright
Copyright © Materials Research Society 1991

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