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The Challenge of GaAs Heterojunction Bipolar Transistor Integrated Circuit Technology.

Published online by Cambridge University Press:  26 February 2011

Han-Tzong Yuan
Han-Tzong Yuan*
Affiliation:
Central Research Laboratories, Texas Instruments Incorporated, Dallas, Texas 75265
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Abstract

The status and progress of AlGaAs/GaAs heterojunction bipolar transistor integrated circuits are reviewed. The challenge of fabricating large-scale integrated circuits using heterojunction bipolar transistors is discussed. Specifically, the issues related to low defect epitaxial materials, localized impurity doping techniques, simple and reliable ohmic contacts, and multilevel interconnects are examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 637
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Asbeck, P. M., Chang, M. F., Wang, K. C., Miller, D. L., Sullivan, G. J., Sheng, N. H., Sovero, E., and Higgins, J. A., IEEE Trans. Electron Devices, ED–34, 2571 (1987).Google Scholar
2. Chang, M. F., Asbeck, P. M., Wang, K. C.. Sheng, N. H., Sullivan, G. J., and Miller, D. L., IEEE Electron Device Lett. EDL–8, 303 (1987).Google Scholar
3. Nagata, K.. Nakajima, O., Yamauchi, Y., Nittono, T., Ito, H., and Ishibashi, T., IEEE Trans. Electron Devices ED–35, 2 (1988).Google Scholar
4. Ishibashi, T., Nakajima, O., nagata, K., Yamanchi, Y., Ito, H., and Nitto, T., IEDM Technical Digest (1988).Google Scholar
5. Wang, K., Asbeck, P., Chang, M., Sullivan, G., and Miller, D., GaAs IC Symposium, Technical Digest, 83 (1987).Google Scholar
6. Yuan, H. T., Delaney, J. B., Shih, H. D., and Tran, L. T., ISSCC Digest of Technical Papers, p.74 (1986).Google Scholar
7. Whitmire, D., Garcia, V., Evans, S., ISSCC Digest of Technical Papers, p.34 (1988).Google Scholar
8. Saito, J., Igarashi, T., Nakamura, T., Kondo, K. and Shibatomi, A., J. Crystal Growth, 81, 188 (1987).CrossRefGoogle Scholar
9. Sonoda, T., Ito, M., Segawa, K., Takamiya, S. and Mitsui, S., Japan. J. Appl. Phys. 27, 337 (1988).CrossRefGoogle Scholar
10. Matteson, S. and Shih, H. D., Appl. Phys. Lett. 48,47 (1986).CrossRefGoogle Scholar
11. Model MOCVD-450 reactor, Spire Corp. Bedford, Mass. 01730.Google Scholar
12. Model GS-3300, Emcore Corp. Somerset, NJ, 08873.Google Scholar
13. Tully, J. W., Hant, W., O'Brien, B. B., IEEE Electron Device Lett. EDL–7, 615 (1986).Google Scholar
14. Palmstrom, C. J. and Morgan, D. V., in Metallization for GaAs Device and Circuits, Edited by Howes, M. J. and Morgan, D. M. (John Wiley & Sons Inc., New York, 1983).Google Scholar
15. Kuan, T. S., Batson, P. E., Jackson, T. N., Rupprecht, H., and Wilkie, E. L., J. Appl. Phys. 54,6932 (1983).Google Scholar
16. Woodall, J.M., Freeouf, J.L., Pettit, G.D., Jackson, T., and Kirchner, P., J. Vac. Sci. Technol., 19,626 (1981).Google Scholar
17. Nittoni, T., Ito, H., Nakajima, O., and Ishibashi, T., Japanese J. Appl. Phys. 25, L865 (1986).Google Scholar
18. Tiwari, S., Ginzberg, A., Akhtar, S., Wright, S. L., Marks, R. F., and Kiehl, R.. IEEE, EDL–9,422 (1988).Google Scholar