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Cathodoluminescence Spectroscopy For Evaluation Of Defect Passivation In GaSb

Published online by Cambridge University Press:  15 February 2011

U. Pal ,
J. Piqueras ,
P. S. Dutta ,
H. L. Bhat ,
G. C. Dubey ,
Vikram Kumar  and
E. Dieguez
U. Pal
Affiliation:
Departamento de Fisica de Materiales, Facultad de Fisica, Universidad Complutense, 28040, Madrid, Spain
J. Piqueras
Affiliation:
Departamento de Fisica de Materiales, Facultad de Fisica, Universidad Complutense, 28040, Madrid, Spain
P. S. Dutta
Affiliation:
Department of Physics, Indian Institute of Science, Bangalore - 560 012, India
H. L. Bhat
Affiliation:
Department of Physics, Indian Institute of Science, Bangalore - 560 012, India
G. C. Dubey
Affiliation:
Solid State Physics Laboratory, Lucknow Road, Delhi - 110 054, India
Vikram Kumar
Affiliation:
Solid State Physics Laboratory, Lucknow Road, Delhi - 110 054, India
E. Dieguez
Affiliation:
Departamentde Fisica de Materiales, Universidad Autonoma, C-IV, 28049 Cantoblanco- Madrid, Spain
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Abstract

Cathodoluminescence (CL) technique has been employed to study the optical properties of GaSb after deposition of hydrogenated amorphous silicon (a-Si:H). CL images recorded at various depths in the samples clearly show passivation of extended defects on the surface as well as in the bulk region. The passivation of various recombination centres in the bulk is attributed to formation of hydrogen-impurity complexes by diffusion of hydrogen ions from the plasma. Enhancement in luminescence intensity is seen due to passivation of non-radiative recombination centres. The passivation efficiency is found to improve with increase in a-Si:H deposition temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 537
Copyright
Copyright © Materials Research Society 1996

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References

1. Yacobi, B.G. and Holt, D.B., J. Appl. Phys. 59, p. R1 (1986).Google Scholar
2. Milnes, A.G. and Polyakov, A.Y., Solid State Electronics 36, p. 803 (1993).Google Scholar
3. Dutta, P.S., Bhat, H.L., Sangunni, K.S. and Kumar, Vikram, J. Crystal Growth 141, p. 44 (1994).Google Scholar
4. Dominguez-Adame, F., Piqueras, J. and Fernandez, P., Appl. Phys. Letts. 58, p. 257 (1991).Google Scholar
5. Casey, H.C. Jr. and Jayson, J.S., J. Appl. Phys. 42, p. 2774 (1971).Google Scholar
6. Dutta, P.S., Sangunni, K.S., Bhat, H.L. and Kumar, Vikram, Phys. Rev. B 51, p.2153 (1995).Google Scholar
7. Kanaya, K. and Okayama, S., J. Phys. D 5, p. 43 (1972).Google Scholar
8. Dutta, P.S., Rao, K.S.R. Koteswara, Bhat, H.L. and Kumar, Vikram, Appl. Phys. A 61, p. 149 (1995).Google Scholar